Modeling of X-ray rocking curves for layers after two-stage ion-implantation
In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be⁺ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2017 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/214945 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modeling of X-ray rocking curves for layers after two-stage ion-implantation / O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 355-361. — Бібліогр.: 30 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862744344248713216 |
|---|---|
| author | Liubchenko, O.I. Kladko, V.P. Gudymenko, O.Yo. |
| author_facet | Liubchenko, O.I. Kladko, V.P. Gudymenko, O.Yo. |
| citation_txt | Modeling of X-ray rocking curves for layers after two-stage ion-implantation / O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 355-361. — Бібліогр.: 30 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be⁺ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke–Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(111) layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 µC, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0.1%. Additionally, an amorphous layer with significant thickness was found in the implantation region.
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| first_indexed | 2026-03-21T19:36:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214945 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T19:36:26Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Liubchenko, O.I. Kladko, V.P. Gudymenko, O.Yo. 2026-03-05T12:01:35Z 2017 Modeling of X-ray rocking curves for layers after two-stage ion-implantation / O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 355-361. — Бібліогр.: 30 назв. — англ. 1560-8034 PACS: 61.05 https://nasplib.isofts.kiev.ua/handle/123456789/214945 https://doi.org/10.15407/spqeo20.03.355 In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be⁺ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke–Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(111) layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 µC, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0.1%. Additionally, an amorphous layer with significant thickness was found in the implantation region. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modeling of X-ray rocking curves for layers after two-stage ion-implantation Article published earlier |
| spellingShingle | Modeling of X-ray rocking curves for layers after two-stage ion-implantation Liubchenko, O.I. Kladko, V.P. Gudymenko, O.Yo. |
| title | Modeling of X-ray rocking curves for layers after two-stage ion-implantation |
| title_full | Modeling of X-ray rocking curves for layers after two-stage ion-implantation |
| title_fullStr | Modeling of X-ray rocking curves for layers after two-stage ion-implantation |
| title_full_unstemmed | Modeling of X-ray rocking curves for layers after two-stage ion-implantation |
| title_short | Modeling of X-ray rocking curves for layers after two-stage ion-implantation |
| title_sort | modeling of x-ray rocking curves for layers after two-stage ion-implantation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214945 |
| work_keys_str_mv | AT liubchenkooi modelingofxrayrockingcurvesforlayersaftertwostageionimplantation AT kladkovp modelingofxrayrockingcurvesforlayersaftertwostageionimplantation AT gudymenkooyo modelingofxrayrockingcurvesforlayersaftertwostageionimplantation |