Modeling of X-ray rocking curves for layers after two-stage ion-implantation
In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be⁺ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214945 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modeling of X-ray rocking curves for layers after two-stage ion-implantation / O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 355-361. — Бібліогр.: 30 назв. — англ. |