Modeling of X-ray rocking curves for layers after two-stage ion-implantation

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• ISSN: 1560-8034
• Main Authors: Liubchenko, O.I., Kladko, V.P., Gudymenko, O.Yo.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214945
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Modeling of X-ray rocking curves for layers after two-stage ion-implantation / O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 355-361. — Бібліогр.: 30 назв. — англ.

In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be⁺ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies...