Effective polycrystalline sensor of ultraviolet radiation

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2017
• Автори: Pavelets, S.Yu., Bobrenko, Yu.N., Semikina, T.V., Krulikovska, K.B., Sheremetova, G.I., Аtdaev, В.S., Yaroshenko, M.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/214949
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ.

Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for the high stability of the parameters inherent to the p-Cu₁.₈S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.