Effective polycrystalline sensor of ultraviolet radiation
Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable poly...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214949 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862647541765505024 |
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| author | Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. |
| author_facet | Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. |
| citation_txt | Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for the high stability of the parameters inherent to the p-Cu₁.₈S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.
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| first_indexed | 2026-03-21T13:45:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214949 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:45:35Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. 2026-03-05T12:03:48Z 2017 Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 73.20.At, 73.40.Kp, 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/214949 https://doi.org/10.15407/spqeo20.03.335 Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for the high stability of the parameters inherent to the p-Cu₁.₈S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effective polycrystalline sensor of ultraviolet radiation Article published earlier |
| spellingShingle | Effective polycrystalline sensor of ultraviolet radiation Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. |
| title | Effective polycrystalline sensor of ultraviolet radiation |
| title_full | Effective polycrystalline sensor of ultraviolet radiation |
| title_fullStr | Effective polycrystalline sensor of ultraviolet radiation |
| title_full_unstemmed | Effective polycrystalline sensor of ultraviolet radiation |
| title_short | Effective polycrystalline sensor of ultraviolet radiation |
| title_sort | effective polycrystalline sensor of ultraviolet radiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214949 |
| work_keys_str_mv | AT paveletssyu effectivepolycrystallinesensorofultravioletradiation AT bobrenkoyun effectivepolycrystallinesensorofultravioletradiation AT semikinatv effectivepolycrystallinesensorofultravioletradiation AT krulikovskakb effectivepolycrystallinesensorofultravioletradiation AT sheremetovagi effectivepolycrystallinesensorofultravioletradiation AT atdaevvs effectivepolycrystallinesensorofultravioletradiation AT yaroshenkomv effectivepolycrystallinesensorofultravioletradiation |