Effective polycrystalline sensor of ultraviolet radiation
Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable poly...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Cite this: | Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ. |
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| author | Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. |
| author_facet | Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. |
| citation_txt | Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for the high stability of the parameters inherent to the p-Cu₁.₈S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 335-339.
doi: https://doi.org/10.15407/spqeo20.03.335
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
335
PACS 73.20.At, 73.40.Kp, 84.60.Jt
Effective polycrystalline sensor of ultraviolet radiation
S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev,
M.V. Yaroshenko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03680 Kyiv, Ukraine
Tel.: 38 (044) 525-6200; e-mail: tanyasemikina@gmail.com
Abstract. Deposition of special thin layers with high and low resistance in space charge
region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a
sufficient increase in photosensitivity and decrease in dark tunneling-recombination
current. Highly efficient and stable polycrystalline photoconverters of ultraviolet
radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric
properties have been investigated, and the main operational parameters of ultraviolet
sensors have been adduced. The reasons for high stability of the parameters inherent to
the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components
additionally doped to the barrier structure and stability of the photocurrent photoemission
component.
Keywords: polycrystalline UV sensor, cadmium sulfide, copper chalcogenide, surface-
barrier structure, energy band offset diagram.
Manuscript received 10.04.17; revised version received 02.08.17; accepted for
publication 06.09.17; published online 09.10.17.
Polycrystalline photoconverters (PhC) based on A2B6
compounds are among the most sensitive sensors of
ultraviolet (UV) radiation. The PhC structure
polycrystallinity does not hamper to get not only the
maximum photosensitivity but also the electrical
characteristics of barrier junction close to optimal and
comparable with electrical characteristics of the best
monocrystalline sensor analogs. Textured monophase
thin-film polycrystalline layers deposited on a
conducting substrate represent a system of parallel
conjugated single crystals, and the electrical properties
of barrier structures created on their basis are not worsie
in comparison with single crystal analogs. Realization of
direct transition in А2В6 bandgap gives the capability to
use the thin photoactive layers with the thickness
(2…5 μm). Production of thin films for photoconverters
simplifies realization of device manufacture planar
technology. Planar technology and applying the thin-
film polycrystalline structures can significantly reduce
the cost of PhC production. Moreover, the technological
process of PhC obtaining on the base of A2B6
compounds is further simplified by getting the low
values of the sensor series resistance Rp without an
additional doping procedure. This applies to the
compounds CdS and CdSe. It is known [1] that
regulating the concentration of point defects by changing
the conditions for the crystal growth, the concentration
of free carriers can vary in a wide range. The electron
concentration of the order of 1016 cm–3 can be obtained
without additional doping with an extraneous impurity.
The above concentration of the majority current carriers
is sufficient to create an effective ultraviolet sensor with
a sufficiently wide dynamic range of detectable powers:
no less than 6 orders of magnitude.
The complexity of obtaining the wide-gap A2B6
semiconductors with a sufficiently high p-type
conductivity, as well as the absence of isoperiodic
hetero-partner causes the fact that the most effective
barrier structure for A2B6 compounds is the surface-
barrier one. For polycrystalline layers, applying the
Schottky diodes is ineffective. Indeed, the metal film
should have a thickness of the order of 10 nm, and the
deposition of metal film of this thickness, which is
continuous on the relief surface of the polycrystalline
semiconductor, is problematic.
New perspectives for developing the effective
barrier structures are associated with a degenerate
semiconductor of p-type copper chalcogenide, namely:
its stable modification Cu1.8S (digenite) that is an ideal
pair for wide-gap A2B6 semiconductors of the n-type
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 335-339.
doi: https://doi.org/10.15407/spqeo20.03.335
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
336
conductivity. The advantage of using p-Cu1.8S in
surface-barrier photoconverters instead of metal is
associated with the possibility of growing nanometer (~
10 nm) Cu1.8S film on the surface of polycrystalline
layers of A2B6 compounds. The developed by us
technique for deposition of Cu1.8S on the surface of A2B6
compounds polycrystalline layers [2] allows obtaining a
continuous transparent film with the thickness d ~10 nm.
Applying the degenerate semiconductor instead of metal
makes it possible to observe and practically use the
photoelectric effect in the UV region of the spectrum,
which is associated with the transport of hot electrons
(photoemission) into an A2B6 semiconductor [3-5]. The
transfer of hot carriers is weakly dependent on
recombination processes at the interface of the junction,
which provides high stability of this component in the
photocurrent. It was experimentally ascertained that the
largest contribution of hot carriers to the photoeffect in
the spectral region of UV radiation is observed at a
thickness of Cu1.8S within the range 10 to 15 nm. In the
case of p-Cu1.8S/n-CdS sensors, emission of hot
electrons from Cu1.8S to CdS gives a significant addition,
which can reach 50% of the photocurrent generated in
the semiconductor structure at UV irradiation.
Possessing high quantum efficiency, p-Cu1.8S/n-
CdS UV radiation sensors concede to the best surface-
barrier structures in terms of electric parameters. The
electric parameters worsening are related with the large
tunnel-recombination currents flowing through the
junction and shunting the minimum above-barrier
currents [6, 7]. To reduce the tunnel-recombination
currents, it is proposed to insert thin high-resistance low-
imperfect interlayers into the space charge region in CdS
[8]. This procedure reduces the dark current by 3-4
orders of magnitude. However, a thin high resistive layer
adjoining with Cu1.8S reduces the pulling electric field in
the photoactive subsurface region, which leads to a
decrease in the quantum efficiency of photoconverters.
To maintain the high quantum efficiency, we introduce
the additional low-resistance region which is formed in
the space charge region that facilitates redistribution of
the pulling electric field with localization of its
maximum values at the p-Cu1.8S/n-CdS interface near
the illuminated surface of the photosensitive CdS.
The developed method of thermal evaporation with
condensation in a quasi-closed volume was used to
obtain the base photosensitive layers CdS [9].
Polycrystalline CdS layers with a photosensitive area of
100 mm2 and 150 mm2, thickness 5…7 µm and with the
concentration of the majority charge carriers n ≈
1015 cm–3 were grown on metalized dielectric substrates.
Then, a high resistive (n ≈ 1013 cm–3) CdS layer with the
thickness close to 100 nm was deposited. A top of the
high resistive layer, a low resistive CdS layer was grown
with the thickness d ~ 50 nm and electron density n ≈
1016 cm–3. The consequent deposition of thin CdS layers
with different conductivity in one technological cycle is
realized using the special technological procedure
developed in this work (know how).
To create the photoconverters a barrier-forming
layer of Cu1.8S was deposited on the indicated base
layers with low resistive surface regions. The structure
has defining features of the surface-barrier one: the
electric field is almost completely concentrated in the
base layer because of sharp asymmetry in the
conductivity of contacting materials (hole concentration
in Cu1.8S is p = 5·1021 cm–3). The presence of a low-
resistivity layer contributes to the optimal space
redistribution of the field of the contact potential
difference with localization of its maximum values in the
near-surface region, where the maximum absorption of
UV radiation occurs. This situation is demonstrated by
the energy diagram of the p-Cu1.8S/n-CdS photoconver-
ter in Fig. 1.
The dashed curve in the diagram indicates the high
resistive layer with the concentration Nd2, which contacts
with the low resistive layer with Nd1 presented in the
CdS base layer before deposition of Cu1.8S. Between
these layers, there is a space charge region of the n-n
junction, in which the value of the potential barrier is:
φ1 = еUd1=kTln (Nd2 / Nd1),
where k is the Boltzmann constant, T – current
temperature.
After deposition of the Cu1.8S thin layer, the
contact potential difference φc (between Cu1.8S and CdS)
compensates the potential barrier φ1, and, since φc > φ1,
the opposite potential barrier φ is formed. Obviously, the
φ value will be equal to the difference in the work
functions of Cu1.8S and the CdS high resistive part. In
the diagram (Fig. 1) the more abrupt run φ(x)
corresponds to the low resistive part and, consequently,
to the large values of the pulling electric field E = dφ/dx
in the near surface region CdS.
Fig. 1. The energy band diagram of a Cu1.8S/CdS
heterojunction with a low resistivity surface layer. The dashed
line shows the behavior of the CdS conduction band before
deposition of Cu1.8S; F is the Fermi level; c and v are the
conduction and valence bands, respectively.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 335-339.
doi: https://doi.org/10.15407/spqeo20.03.335
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
337
Fig. 2 shows the direct branches of the current-
voltage (I-V) characteristic inherent to the studied PhC
with a photoactive area of 100 mm2. The curve 1 is the
typical direct branch of I-V characteristic for p-Cu1.8S/n-
CdS junction with non-optimized space charge area. A
significant decrease in dark currents (by 2.5 to 3 orders
of magnitude) with introduction of the high-resistance
layer is illustrated by the curve 2 in the figure. The
dependence of the current on the voltage is always
exponential. The differential resistance is Rd > 109 Ohm
(with an external bias voltage of 10 mV). The curve 3 is
I-V characteristic for p-Cu1.8S/n-CdS structure with low
resistive layer. It can be seen that at low values of
voltage U, the parameters of the current-voltage
characteristic practically coincide with the curve 2.
However, in contrast to a photoconverter that does not
have a low resistive interlayer (Fig. 2, curve 2), at U >
0.3 V, the exponential part of the current versus the
voltage is replaced by the part at which the current tends
to saturation with increasing voltage. The current
tendency to the saturation with an increase in the
positive voltage is illustrated by the I-V characteristic
that is presented in a natural scale (curve 4 in the figure).
The considered features of the straight branches of
the I-V characteristics of structures with the low resistive
surface layer can be interpreted using the diode model
with double saturation [10], the existence of which is
possible, for example, in the presence of a back-stop
contact. However, as indicated by the capacitance –
voltage and load characteristics, the indicated model is
not realized. For a diode model with double saturation
(or two switched-on connected in series with the
opposite polarity of Schottky diodes), capacitance will
decrease with increasing voltage applied both in direct,
and in the opposite direction.
A different curves behavior is observed for the
studied structures. The capacitance decreases for nega-
tive bias voltages, and increases at the positive ones. In
addition, it is obvious that the diode with double satura-
tion cannot be an effective photoconverter because of the
large series resistance of the structure. In our case, we
get the effective photoconverter, as it ensues from the
high spectral sensitivity of the studied structures. Fig. 3
shows the photocurrent spectra, where curve 2 and 1 are,
respectively, with and without the low-resistive layer.
A noticeable sensitivity increase is presented in the en-
tire spectrum region when the low-resistive layer is in-
troduced. Observed absolute values of the photocurrent
correspond to the best characteristics for known UV sen-
sors [11-15]. Thus, sensitivity in the germicidal region of
solar radiation at the wavelength λ = 254 nm reaches
values of 120 mA/W.
The fact that the model of a conventional diode with
double saturation is not realized in our case is also con-
firmed by the experimental loading (light) I-V characte-
ristics presented in Fig. 4. The series resistance Rs of these
structures can be calculated using the load characteristics:
Rs = 2(tg α – Uoc / Іsc + Р/ Іsc
2),
Fig. 2. Direct branches of the current-voltage characteristics
for photoconverters of various designs: Cu1.8S/CdS structures
(1) without special surface layers, (2) with a high resistive
layer, and (3) with a low resistive layer on the top of high
resistive layer. Curves 1–3 are plotted in the log scale (left
vertical axis). 4 – linear scale of currents (right scale).
Fig. 3. Spectra of the sensor photocurrent: 1 – Cu1.8S/CdS
without a low-resistivity layer; 2 – Cu1.8S/CdS with a low-
resistance layer.
where α is the angle indicated in Fig. 4, Uoc – open
circuit voltage, Isc – short-circuit current, P – area under
the curve U = f (I). For the sensor, the characteristic of
which is shown in Fig. 4, Rs = 7 kOhm. The above-
described regularities of dark I-V characteristic (Fig. 2)
are most likely related to the existence of a hidden n-n
homojunction, which starts to appear at positive bias
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 335-339.
doi: https://doi.org/10.15407/spqeo20.03.335
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
338
voltages U > φ/e. In this case, the space charge area
which exists between the low-resistance and high-
resistance parts of the base layer increases. The fact of
space charge increasing leads to dark current limitation
(curves 1, 3 in Fig. 2) and structure capacity diminution
under condition of external positive bias increasing.
For UV sensors with large photoactive area, the use
of which is effective in the case of detection of low radia-
tion fluxes (metrology of low UV fluxes, control of bio--
chemiluminescence, etc.), the spatial uniformity of the
photoresponse (good zone characteristic of the sensor)
becomes critical. The zone characteristic of the sensor
with an area of 100 mm2, obtained in this study, is shown
in Fig. 5. The data were obtained under condition of mo-
ving the light probe 50 µm wide over the PhC surface
along the X and Y axes. As can be seen, deviation from
the uniformity of ΔIph along the axes does not exceed
0.5%, which is at the level of world standards [16, 17].
Thus, the creation of effective and stable
polycrystalline UV sensors is possible, due to the
original features of the p-Cu1.8S/n-CdS surface-barrier
structure. Let us point out the main ones: the possibility
of creating a thin (<10 nm) continuous Cu1.8S film on the
relief surface of a polycrystalline semiconductor. At the
indicated thicknesses, the conditions for the maximum
absorption of UV radiation in the region of the pulling
electric field are realized, and an appreciable
contribution to the photocurrent of hot electrons
generated by high-energy radiation in the Cu1.8S layer
(the transparent component) is observed.
Fig. 4. Load I-V characteristics of Cu1.8S/CdS sensors with a
low-resistance surface layer. Lighting conditions: a mercury
lamp with an equivalent power of 1 mW/cm2. The area of the
sensor is 100 mm2.
Fig. 5. Deviation of the photocurrent when the light probe
moves along the converter surface in the directions X and Y.
We conclude that formation of thin high-resistance
and low-resistance layers in the space-charge region
leads to a decrease in the dark tunnel-recombination
currents and preserves the high quantum efficiency of
the UV sensor. The observed regularities of the electrical
characteristics at large forward bias voltages are
explained by the presence of a hidden n-n junction and
do not interfere with the achievement of photoconverter
high operational parameters. The high stability of the
operational parameters of p-Cu1.8S/n-CdS sensors is
determined by the absence of additional doping with the
impurity components of the barrier structure and the
stability of the photocurrent photoemission component.
References
1. Physics of II-VI Compounds, Eds. A.N.
Georgobiani, M.K. Sheinkman. Moscow: Nauka,
1986 (in Russian).
2. Patent № 91300 (Ukraine). A method for
manufacturing phototransducer of ultraviolet
radiation. Yu.N. Bobrenko, S.Yu. Pavelets, F.Y.
Korzhynskyy, V.V. Ryuhtin, O.B.Shymanovsky.
12.07.2010.
3. Bobrenko Yu.N., Pavelets A.M., Pavelets S.Yu.,
Tkachenko V.M. Short-wavelength рhotosen-
sitivity of surface-barrier structures with degenerate
semiconductor-semiconductor junctions. Tech.
Phys. Lett. 1994. 20. P. 477–480.
4. Bobrenko Yu.N., Pavelets S.Yu., Pavelets A.M.
The efficient photoelectric converters of UV
radiation with ZnS-based graded-gap layers.
Semiconductors. 2009. 43. P. 801–805.
5. Bobrenko Yu.N., Pavelets S.Yu., Pavelets A.M.,
Yaroshenko N.V. Photoelectric converters with
graded-gap layers based on ZnSe. Semiconductors.
2013. 47, No. 10. P. 1372–1375.
6. Pavelets S.Yu., Svanidze Т.М., Tarasenko V.P.
Singularities of current passage in heterojunctions
of a degenerate semiconductor-semiconductor. Ukr.
Phys. J. 1983. 28, No. 4. P. 581–582 (in Russian).
7. Pavelets S.Yu., Svanidze Т.М., Tarasenko V.P. The
reverse current of heterojunctions is a degenerate
semiconductor-semiconductor. Fizika Tekhnika
ΔI
ph
, m
A
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 3. P. 335-339.
doi: https://doi.org/10.15407/spqeo20.03.335
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
339
Poluprovod. 1983. 17, No. 7. P. 1330–1332 (in
Russian).
8. Pavelets S.Yu., Bobrenko Yu.N., Komashchenko
A.V., Shengeliya T.E. A new structure of the CdS-
based surface-barrier ultraviolet sensor.
Semiconductors. 2001. 35, No. 5. P. 605–607.
9. Bubnov Yu.Z., Lourier M.S., Staros F.G., Filaretov
G.A. Vacuum deposition of films in the quasi-
closed volume. M.: Sov. Radio, 1975 (in Russian).
10. Milns A.G., Feucht D.L. Heterojunctions and
Metal-Semiconductor Junctions. New York and
London: Academic Press, 1972.
11. http://www.opsytec.com/products/uv-sensors/uv-
probes/
12. http://www.scitec.uk.com/uvphotodiodes/datasheet
s/uv-cure.pdf
13. https://www.hamamatsu.com/resources/pdf/ssd/e02
_handbook_si_photodiode.pdf
14. http://www.farnell.com/datasheets/1673772.pdf
15. ftp://ftp.dynamax.com/manuals/UV_Manual.pdf
16. Photodiodes. Catalog “Hamamatsu Photonics
K.K.”, 1990.
17. Blank T.V., Goldberg Yu.A. Semiconductor
photoelectric converters for the ultraviolet region of
the spectrum. Semiconductors. 2003. 37, No. 9. P.
999–1030.
|
| id | nasplib_isofts_kiev_ua-123456789-214949 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:45:35Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. 2026-03-05T12:03:48Z 2017 Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 73.20.At, 73.40.Kp, 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/214949 https://doi.org/10.15407/spqeo20.03.335 Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for the high stability of the parameters inherent to the p-Cu₁.₈S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effective polycrystalline sensor of ultraviolet radiation Article published earlier |
| spellingShingle | Effective polycrystalline sensor of ultraviolet radiation Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Krulikovska, K.B. Sheremetova, G.I. Аtdaev, В.S. Yaroshenko, M.V. |
| title | Effective polycrystalline sensor of ultraviolet radiation |
| title_full | Effective polycrystalline sensor of ultraviolet radiation |
| title_fullStr | Effective polycrystalline sensor of ultraviolet radiation |
| title_full_unstemmed | Effective polycrystalline sensor of ultraviolet radiation |
| title_short | Effective polycrystalline sensor of ultraviolet radiation |
| title_sort | effective polycrystalline sensor of ultraviolet radiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214949 |
| work_keys_str_mv | AT paveletssyu effectivepolycrystallinesensorofultravioletradiation AT bobrenkoyun effectivepolycrystallinesensorofultravioletradiation AT semikinatv effectivepolycrystallinesensorofultravioletradiation AT krulikovskakb effectivepolycrystallinesensorofultravioletradiation AT sheremetovagi effectivepolycrystallinesensorofultravioletradiation AT atdaevvs effectivepolycrystallinesensorofultravioletradiation AT yaroshenkomv effectivepolycrystallinesensorofultravioletradiation |