Effective polycrystalline sensor of ultraviolet radiation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Pavelets, S.Yu., Bobrenko, Yu.N., Semikina, T.V., Krulikovska, K.B., Sheremetova, G.I., Аtdaev, В.S., Yaroshenko, M.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214949
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effective polycrystalline sensor of ultraviolet radiation / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 335-339. — Бібліогр.: 17 назв. — англ.

Deposition of special thin layers with high and low resistance in the space charge region of surface barrier photoconverters based on the p-Cu₁.₈S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable poly...