The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• ISSN: 1560-8034
• Hauptverfasser: Ievtushenko, A.I., Dusheyko, M.G., Karpyna, V.A., Bykov, O.I., Lytvyn, P.M., Olifan, O.I., Levchenko, V.A., Korchovyi, A.A., Starik, S.P., Tkach, S.V., Kuzmenko, E.F., Lashkarev, G.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214953
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method / A.I. Ievtushenko, M.G. Dusheyko, V.A. Karpyna, O.I. Bykov, P.M. Lytvyn, O.I. Olifan, V.A. Levchenko, A.A. Korchovyi, S.P. Starik, S.V. Tkach, E.F. Kuzmenko, G.V. Lashkarev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 314-318. — Бібліогр.: 19 назв. — англ.

For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry, and optical transmission measurements have been discussed. It was shown that the increase in substrate temperature caused the formation of the CuAlO₂ phase. Additional optimization of technological parameters of growth and post-growth temperature annealing is necessary to obtain single-phase CuAlO₂ films.