The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Ievtushenko, A.I., Dusheyko, M.G., Karpyna, V.A., Bykov, O.I., Lytvyn, P.M., Olifan, O.I., Levchenko, V.A., Korchovyi, A.A., Starik, S.P., Tkach, S.V., Kuzmenko, E.F., Lashkarev, G.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214953
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method / A.I. Ievtushenko, M.G. Dusheyko, V.A. Karpyna, O.I. Bykov, P.M. Lytvyn, O.I. Olifan, V.A. Levchenko, A.A. Korchovyi, S.P. Starik, S.V. Tkach, E.F. Kuzmenko, G.V. Lashkarev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 314-318. — Бібліогр.: 19 назв. — англ.

For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fouri...