Ellipsometry and optical spectroscopy of low-dimensional family TMDs

Here, we report a comprehensive study of the fundamental optical properties of two-dimensional materials. These properties have been ascertained using spectroscopic ellipsometry, optical spectroscopy of Raman scattering, and photoluminescence. We have focused on the optical properties of the chemica...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2017
Автори: Kravets, V.G., Prorok, V.V., Poperenko, L.V., Shaykevich, I.A.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/214956
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Ellipsometry and optical spectroscopy of low-dimensional family TMDs / V.G. Kravets, V.V. Prorok, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 284-296. — Бібліогр.: 43 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kravets, V.G.
Prorok, V.V.
Poperenko, L.V.
Shaykevich, I.A.
author_facet Kravets, V.G.
Prorok, V.V.
Poperenko, L.V.
Shaykevich, I.A.
citation_txt Ellipsometry and optical spectroscopy of low-dimensional family TMDs / V.G. Kravets, V.V. Prorok, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 284-296. — Бібліогр.: 43 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Here, we report a comprehensive study of the fundamental optical properties of two-dimensional materials. These properties have been ascertained using spectroscopic ellipsometry, optical spectroscopy of Raman scattering, and photoluminescence. We have focused on the optical properties of the chemically exfoliated layered TMDs: MoS₂, MoSe₂, WS₂, and WSe₂. The complex refractive index and optical conductivity within the region 1 to 4.5 eV were extracted, which led to the identification of many unique interband transitions at high symmetry points in the electron band structure. The positions of the so-called A and B excitons in monolayers are found to shift upwards in energy as compared with those of the bulk form and have a smaller separation because of the decreased interactions between the layers. For monolayer TMDs, the valence-band spin-orbit splitting at the K point was estimated from the energy difference between the A and B exciton peaks. Our findings of the spin-orbit coupling of ∼0.16, ∼0.26, ∼0.37, and ∼0.55 eV in monolayers MoS₂, MoSe₂, WS₂, and WSe₂, respectively. All these findings not only extend our understanding of the novel electronic structures of mono- and few-layer TMDs but also provide a foundation for future technological applications of optoelectronic and spintronic device components.
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last_indexed 2026-03-21T09:46:20Z
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publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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spelling Kravets, V.G.
Prorok, V.V.
Poperenko, L.V.
Shaykevich, I.A.
2026-03-05T12:05:44Z
2017
Ellipsometry and optical spectroscopy of low-dimensional family TMDs / V.G. Kravets, V.V. Prorok, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 284-296. — Бібліогр.: 43 назв. — англ.
1560-8034
PACS: 78.20.-e, 78.66.-w
https://nasplib.isofts.kiev.ua/handle/123456789/214956
https://doi.org/10.15407/spqeo20.03.284
Here, we report a comprehensive study of the fundamental optical properties of two-dimensional materials. These properties have been ascertained using spectroscopic ellipsometry, optical spectroscopy of Raman scattering, and photoluminescence. We have focused on the optical properties of the chemically exfoliated layered TMDs: MoS₂, MoSe₂, WS₂, and WSe₂. The complex refractive index and optical conductivity within the region 1 to 4.5 eV were extracted, which led to the identification of many unique interband transitions at high symmetry points in the electron band structure. The positions of the so-called A and B excitons in monolayers are found to shift upwards in energy as compared with those of the bulk form and have a smaller separation because of the decreased interactions between the layers. For monolayer TMDs, the valence-band spin-orbit splitting at the K point was estimated from the energy difference between the A and B exciton peaks. Our findings of the spin-orbit coupling of ∼0.16, ∼0.26, ∼0.37, and ∼0.55 eV in monolayers MoS₂, MoSe₂, WS₂, and WSe₂, respectively. All these findings not only extend our understanding of the novel electronic structures of mono- and few-layer TMDs but also provide a foundation for future technological applications of optoelectronic and spintronic device components.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Ellipsometry and optical spectroscopy of low-dimensional family TMDs
Article
published earlier
spellingShingle Ellipsometry and optical spectroscopy of low-dimensional family TMDs
Kravets, V.G.
Prorok, V.V.
Poperenko, L.V.
Shaykevich, I.A.
title Ellipsometry and optical spectroscopy of low-dimensional family TMDs
title_full Ellipsometry and optical spectroscopy of low-dimensional family TMDs
title_fullStr Ellipsometry and optical spectroscopy of low-dimensional family TMDs
title_full_unstemmed Ellipsometry and optical spectroscopy of low-dimensional family TMDs
title_short Ellipsometry and optical spectroscopy of low-dimensional family TMDs
title_sort ellipsometry and optical spectroscopy of low-dimensional family tmds
url https://nasplib.isofts.kiev.ua/handle/123456789/214956
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AT prorokvv ellipsometryandopticalspectroscopyoflowdimensionalfamilytmds
AT poperenkolv ellipsometryandopticalspectroscopyoflowdimensionalfamilytmds
AT shaykevichia ellipsometryandopticalspectroscopyoflowdimensionalfamilytmds