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Photoconductivity relaxation and electron transport in macroporous silicon structures

Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with a wavelength of 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at va...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2017
Hauptverfasser:	Karachevtseva, L.A., Onyshchenko, V.F., Sachenko, A.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/214991
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Photoconductivity relaxation and electron transport in macroporous silicon structures / L.A. Karachevtseva, V.F. Onyshchenko, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 475-480. — Бібліогр.: 21 назв. — англ.

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