Photoconductivity relaxation and electron transport in macroporous silicon structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Karachevtseva, L.A., Onyshchenko, V.F., Sachenko, A.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214991
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photoconductivity relaxation and electron transport in macroporous silicon structures / L.A. Karachevtseva, V.F. Onyshchenko, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 475-480. — Бібліогр.: 21 назв. — англ.

Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with a wavelength of 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at va...