Photoconductivity relaxation and electron transport in macroporous silicon structures
Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with a wavelength of 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at va...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214991 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoconductivity relaxation and electron transport in macroporous silicon structures / L.A. Karachevtseva, V.F. Onyshchenko, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 475-480. — Бібліогр.: 21 назв. — англ. |
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