Modeling of ionizing radiation effect on static and dynamic behavior of vertical cavity surface-emitting lasers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Eladl, Sh.M., Sharshar, K.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214996
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Modeling of ionizing radiation effect on static and dynamic behavior of vertical cavity surface-emitting lasers / Sh.M. Eladl, K.A. Sharshar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 442-446. — Бібліогр.: 12 назв. — англ.

In this work, the effect of ionizing radiation on the static and dynamic behavior of Vertical Cavity Surface Emitting Laser (VCSEL) was investigated numerically. First, the model of dynamic behavior before irradiation has been analyzed based on the Convolution Theorem. Second, all interesting ionizi...