Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser r...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2017 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215002 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolayenko, M.V. Isaiev, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 396-405. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862631140898111488 |
|---|---|
| author | Neimash, V.B. Melnyk, V.V. Fedorenko, L.L. Shepeliavyi, P.Ye. Strelchuk, V.V. Nikolayenko, A.S. Isaiev, M.V. Kuzmich, A.G. |
| author_facet | Neimash, V.B. Melnyk, V.V. Fedorenko, L.L. Shepeliavyi, P.Ye. Strelchuk, V.V. Nikolayenko, A.S. Isaiev, M.V. Kuzmich, A.G. |
| citation_txt | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolayenko, M.V. Isaiev, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 396-405. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser radiation were experimentally evaluated and analyzed. As sources of excitation, pulse laser radiation with the pulse durations equal to 20 ns and 150 μs and wavelengths equal to 535 and 1070 nm was used. The possibility of efficient tin-induced transformation of silicon from amorphous phase to crystalline one in the 200-nm thick layers of a-Si under the action of laser pulses with a duration equal to 20 ns was shown. The spatial and temporal distributions of laser-induced temperature rise were calculated to interpret experimental results.
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| first_indexed | 2026-03-21T13:46:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215002 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:46:24Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Neimash, V.B. Melnyk, V.V. Fedorenko, L.L. Shepeliavyi, P.Ye. Strelchuk, V.V. Nikolayenko, A.S. Isaiev, M.V. Kuzmich, A.G. 2026-03-06T09:56:05Z 2017 Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolayenko, M.V. Isaiev, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 396-405. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS: 64.75.St, 68.60.Dv, 79.20.Ds, 81.05.Cy https://nasplib.isofts.kiev.ua/handle/123456789/215002 https://doi.org/10.15407/spqeo20.04.396 The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser radiation were experimentally evaluated and analyzed. As sources of excitation, pulse laser radiation with the pulse durations equal to 20 ns and 150 μs and wavelengths equal to 535 and 1070 nm was used. The possibility of efficient tin-induced transformation of silicon from amorphous phase to crystalline one in the 200-nm thick layers of a-Si under the action of laser pulses with a duration equal to 20 ns was shown. The spatial and temporal distributions of laser-induced temperature rise were calculated to interpret experimental results. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation Article published earlier |
| spellingShingle | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation Neimash, V.B. Melnyk, V.V. Fedorenko, L.L. Shepeliavyi, P.Ye. Strelchuk, V.V. Nikolayenko, A.S. Isaiev, M.V. Kuzmich, A.G. |
| title | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation |
| title_full | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation |
| title_fullStr | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation |
| title_full_unstemmed | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation |
| title_short | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation |
| title_sort | tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215002 |
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