Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser r...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215002 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolayenko, M.V. Isaiev, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 396-405. — Бібліогр.: 28 назв. — англ. |