Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Neimash, V.B., Melnyk, V.V., Fedorenko, L.L., Shepeliavyi, P.Ye., Strelchuk, V.V., Nikolayenko, A.S., Isaiev, M.V., Kuzmich, A.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215002
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolayenko, M.V. Isaiev, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 396-405. — Бібліогр.: 28 назв. — англ.

The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser r...