Preparation and study of the porous Si surfaces obtained by electrochemical method
A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morph...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2017 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215003 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862619503474507776 |
|---|---|
| author | Lytovchenko, V. Gorbanyuk, T. Kladko, V. Sarikov, A. Safriuk, N. Fedorenko, L. Asmontas, Steponas Gradauskas, Jonas Sirmulis, Edmundas Zalys, Ovidijus |
| author_facet | Lytovchenko, V. Gorbanyuk, T. Kladko, V. Sarikov, A. Safriuk, N. Fedorenko, L. Asmontas, Steponas Gradauskas, Jonas Sirmulis, Edmundas Zalys, Ovidijus |
| citation_txt | Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si-based MIS structures, as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.
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| first_indexed | 2026-03-21T12:42:02Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215003 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:42:02Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lytovchenko, V. Gorbanyuk, T. Kladko, V. Sarikov, A. Safriuk, N. Fedorenko, L. Asmontas, Steponas Gradauskas, Jonas Sirmulis, Edmundas Zalys, Ovidijus 2026-03-06T09:56:25Z 2017 Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS: 61.72.Dd, 78.55.Mb, 81.05.Rm https://nasplib.isofts.kiev.ua/handle/123456789/215003 https://doi.org/10.15407/spqeo20.04.385 A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si-based MIS structures, as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described. This investigation was carried out under the financial support of the National Academy of Sciences of Ukraine (Projects No. 23-2017, No. ІІІ-5-16, No. ІІІ-10-15) and Research Council of Lithuania (Grant No. TAP-LU-5-2016). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Preparation and study of the porous Si surfaces obtained by electrochemical method Article published earlier |
| spellingShingle | Preparation and study of the porous Si surfaces obtained by electrochemical method Lytovchenko, V. Gorbanyuk, T. Kladko, V. Sarikov, A. Safriuk, N. Fedorenko, L. Asmontas, Steponas Gradauskas, Jonas Sirmulis, Edmundas Zalys, Ovidijus |
| title | Preparation and study of the porous Si surfaces obtained by electrochemical method |
| title_full | Preparation and study of the porous Si surfaces obtained by electrochemical method |
| title_fullStr | Preparation and study of the porous Si surfaces obtained by electrochemical method |
| title_full_unstemmed | Preparation and study of the porous Si surfaces obtained by electrochemical method |
| title_short | Preparation and study of the porous Si surfaces obtained by electrochemical method |
| title_sort | preparation and study of the porous si surfaces obtained by electrochemical method |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215003 |
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