Preparation and study of the porous Si surfaces obtained by electrochemical method

A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morph...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2017
Main Authors: Lytovchenko, V., Gorbanyuk, T., Kladko, V., Sarikov, A., Safriuk, N., Fedorenko, L., Asmontas, Steponas, Gradauskas, Jonas, Sirmulis, Edmundas, Zalys, Ovidijus
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215003
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Lytovchenko, V.
Gorbanyuk, T.
Kladko, V.
Sarikov, A.
Safriuk, N.
Fedorenko, L.
Asmontas, Steponas
Gradauskas, Jonas
Sirmulis, Edmundas
Zalys, Ovidijus
author_facet Lytovchenko, V.
Gorbanyuk, T.
Kladko, V.
Sarikov, A.
Safriuk, N.
Fedorenko, L.
Asmontas, Steponas
Gradauskas, Jonas
Sirmulis, Edmundas
Zalys, Ovidijus
citation_txt Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si-based MIS structures, as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.
first_indexed 2026-03-21T12:42:02Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-21T12:42:02Z
publishDate 2017
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Lytovchenko, V.
Gorbanyuk, T.
Kladko, V.
Sarikov, A.
Safriuk, N.
Fedorenko, L.
Asmontas, Steponas
Gradauskas, Jonas
Sirmulis, Edmundas
Zalys, Ovidijus
2026-03-06T09:56:25Z
2017
Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ.
1560-8034
PACS: 61.72.Dd, 78.55.Mb, 81.05.Rm
https://nasplib.isofts.kiev.ua/handle/123456789/215003
https://doi.org/10.15407/spqeo20.04.385
A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si-based MIS structures, as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.
This investigation was carried out under the financial support of the National Academy of Sciences of Ukraine (Projects No. 23-2017, No. ІІІ-5-16, No. ІІІ-10-15) and Research Council of Lithuania (Grant No. TAP-LU-5-2016).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Preparation and study of the porous Si surfaces obtained by electrochemical method
Article
published earlier
spellingShingle Preparation and study of the porous Si surfaces obtained by electrochemical method
Lytovchenko, V.
Gorbanyuk, T.
Kladko, V.
Sarikov, A.
Safriuk, N.
Fedorenko, L.
Asmontas, Steponas
Gradauskas, Jonas
Sirmulis, Edmundas
Zalys, Ovidijus
title Preparation and study of the porous Si surfaces obtained by electrochemical method
title_full Preparation and study of the porous Si surfaces obtained by electrochemical method
title_fullStr Preparation and study of the porous Si surfaces obtained by electrochemical method
title_full_unstemmed Preparation and study of the porous Si surfaces obtained by electrochemical method
title_short Preparation and study of the porous Si surfaces obtained by electrochemical method
title_sort preparation and study of the porous si surfaces obtained by electrochemical method
url https://nasplib.isofts.kiev.ua/handle/123456789/215003
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AT kladkov preparationandstudyoftheporoussisurfacesobtainedbyelectrochemicalmethod
AT sarikova preparationandstudyoftheporoussisurfacesobtainedbyelectrochemicalmethod
AT safriukn preparationandstudyoftheporoussisurfacesobtainedbyelectrochemicalmethod
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