Preparation and study of the porous Si surfaces obtained by electrochemical method

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• ISSN: 1560-8034
• Hauptverfasser: Lytovchenko, V., Gorbanyuk, T., Kladko, V., Sarikov, A., Safriuk, N., Fedorenko, L., Asmontas, Steponas, Gradauskas, Jonas, Sirmulis, Edmundas, Zalys, Ovidijus
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215003
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ.

A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morph...