Luminescence of crystals ZnSe 〈Al〉:Gd
It has been experimentally shown that the luminescence spectra of ZnSe 〈Al〉 crystals doped with Gd from the vapor phase contain two mutually compatible luminescence bands. It is established that the low-energy G-band is due to recombination with association of complexes (V′′₍Zn₎Al•₍Zn₎) and (V′′₍Zn₎...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215141 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Luminescence of crystals ZnSe 〈Al〉:Gd / V.P. Makhniy, N.D. Vakhnyak, O.V. Kinzerska, I.M. Senko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 80-82. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | It has been experimentally shown that the luminescence spectra of ZnSe 〈Al〉 crystals doped with Gd from the vapor phase contain two mutually compatible luminescence bands. It is established that the low-energy G-band is due to recombination with association of complexes (V′′₍Zn₎Al•₍Zn₎) and (V′′₍Zn₎V•₍Se₎), and the boundary B-band is the result of annihilation of excitons and interband transitions.
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| ISSN: | 1560-8034 |