Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Shkrebtii, A.I., Sachenko, A.V., Sokolovskyi, I.O., Kostylyov, V.P., Kulish, M.R.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Hetero- and low-dimensional structures
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215144
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ.

We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range of their bulk band gap Eg0 have been considered, specifically: CdS (Eg₀ = 2.42 eV), CdSe (Eg₀ = 1.67 eV), CdTe (Eg₀ = 1.5 eV), InP (Eg₀ = 1.27 eV), InAs (Eg₀ = 0.355 eV), and PbSe (Eg₀ = 0.27 eV). Altering r and ∆r, we can determine the optimal size r for minimal reabsorption. As it was shown, decreasing the semiconductor bulk band gap from 2.42 down to 1.24 eV, we can get such an optimum QD size r that reabsorption reduces even below the combined experimental error in the determination of the absorption coefficient and luminescence intensity. Further reduction of the gap Eg₀, however, increases reabsorption at any values of r and ∆r: for instance, for PbSe-based QDs of 1-nm radius and dispersion of 1%, reabsorption reaches 54%.