Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2018 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215144 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732012236832768 |
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| author | Shkrebtii, A.I. Sachenko, A.V. Sokolovskyi, I.O. Kostylyov, V.P. Kulish, M.R. |
| author_facet | Shkrebtii, A.I. Sachenko, A.V. Sokolovskyi, I.O. Kostylyov, V.P. Kulish, M.R. |
| citation_txt | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range of their bulk band gap Eg0 have been considered, specifically: CdS (Eg₀ = 2.42 eV), CdSe (Eg₀ = 1.67 eV), CdTe (Eg₀ = 1.5 eV), InP (Eg₀ = 1.27 eV), InAs (Eg₀ = 0.355 eV), and PbSe (Eg₀ = 0.27 eV). Altering r and ∆r, we can determine the optimal size r for minimal reabsorption. As it was shown, decreasing the semiconductor bulk band gap from 2.42 down to 1.24 eV, we can get such an optimum QD size r that reabsorption reduces even below the combined experimental error in the determination of the absorption coefficient and luminescence intensity. Further reduction of the gap Eg₀, however, increases reabsorption at any values of r and ∆r: for instance, for PbSe-based QDs of 1-nm radius and dispersion of 1%, reabsorption reaches 54%.
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| first_indexed | 2026-03-21T19:39:12Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-215144 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T19:39:12Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shkrebtii, A.I. Sachenko, A.V. Sokolovskyi, I.O. Kostylyov, V.P. Kulish, M.R. 2026-03-09T09:46:17Z 2018 Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 88.40.jm, 88.40.jp https://nasplib.isofts.kiev.ua/handle/123456789/215144 https://doi.org/10.15407/spqeo21.01.058 We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range of their bulk band gap Eg0 have been considered, specifically: CdS (Eg₀ = 2.42 eV), CdSe (Eg₀ = 1.67 eV), CdTe (Eg₀ = 1.5 eV), InP (Eg₀ = 1.27 eV), InAs (Eg₀ = 0.355 eV), and PbSe (Eg₀ = 0.27 eV). Altering r and ∆r, we can determine the optimal size r for minimal reabsorption. As it was shown, decreasing the semiconductor bulk band gap from 2.42 down to 1.24 eV, we can get such an optimum QD size r that reabsorption reduces even below the combined experimental error in the determination of the absorption coefficient and luminescence intensity. Further reduction of the gap Eg₀, however, increases reabsorption at any values of r and ∆r: for instance, for PbSe-based QDs of 1-nm radius and dispersion of 1%, reabsorption reaches 54%. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimensional structures Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator Article published earlier |
| spellingShingle | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator Shkrebtii, A.I. Sachenko, A.V. Sokolovskyi, I.O. Kostylyov, V.P. Kulish, M.R. Hetero- and low-dimensional structures |
| title | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator |
| title_full | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator |
| title_fullStr | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator |
| title_full_unstemmed | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator |
| title_short | Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator |
| title_sort | impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator |
| topic | Hetero- and low-dimensional structures |
| topic_facet | Hetero- and low-dimensional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215144 |
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