Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator

We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2018
Main Authors: Shkrebtii, A.I., Sachenko, A.V., Sokolovskyi, I.O., Kostylyov, V.P., Kulish, M.R.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215144
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Cite this:Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Shkrebtii, A.I.
Sachenko, A.V.
Sokolovskyi, I.O.
Kostylyov, V.P.
Kulish, M.R.
author_facet Shkrebtii, A.I.
Sachenko, A.V.
Sokolovskyi, I.O.
Kostylyov, V.P.
Kulish, M.R.
citation_txt Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range of their bulk band gap Eg0 have been considered, specifically: CdS (Eg₀ = 2.42 eV), CdSe (Eg₀ = 1.67 eV), CdTe (Eg₀ = 1.5 eV), InP (Eg₀ = 1.27 eV), InAs (Eg₀ = 0.355 eV), and PbSe (Eg₀ = 0.27 eV). Altering r and ∆r, we can determine the optimal size r for minimal reabsorption. As it was shown, decreasing the semiconductor bulk band gap from 2.42 down to 1.24 eV, we can get such an optimum QD size r that reabsorption reduces even below the combined experimental error in the determination of the absorption coefficient and luminescence intensity. Further reduction of the gap Eg₀, however, increases reabsorption at any values of r and ∆r: for instance, for PbSe-based QDs of 1-nm radius and dispersion of 1%, reabsorption reaches 54%.
first_indexed 2026-03-21T19:39:12Z
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publishDate 2018
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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spelling Shkrebtii, A.I.
Sachenko, A.V.
Sokolovskyi, I.O.
Kostylyov, V.P.
Kulish, M.R.
2026-03-09T09:46:17Z
2018
Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator / A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, V.P. Kostylyov, M.R. Kulish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 58-64. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS: 88.40.jm, 88.40.jp
https://nasplib.isofts.kiev.ua/handle/123456789/215144
https://doi.org/10.15407/spqeo21.01.058
We have investigated the influence of the average radius r and its dispersion ∆r of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semiconductors used to fabricate QDs with a wide range of their bulk band gap Eg0 have been considered, specifically: CdS (Eg₀ = 2.42 eV), CdSe (Eg₀ = 1.67 eV), CdTe (Eg₀ = 1.5 eV), InP (Eg₀ = 1.27 eV), InAs (Eg₀ = 0.355 eV), and PbSe (Eg₀ = 0.27 eV). Altering r and ∆r, we can determine the optimal size r for minimal reabsorption. As it was shown, decreasing the semiconductor bulk band gap from 2.42 down to 1.24 eV, we can get such an optimum QD size r that reabsorption reduces even below the combined experimental error in the determination of the absorption coefficient and luminescence intensity. Further reduction of the gap Eg₀, however, increases reabsorption at any values of r and ∆r: for instance, for PbSe-based QDs of 1-nm radius and dispersion of 1%, reabsorption reaches 54%.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Hetero- and low-dimensional structures
Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
Article
published earlier
spellingShingle Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
Shkrebtii, A.I.
Sachenko, A.V.
Sokolovskyi, I.O.
Kostylyov, V.P.
Kulish, M.R.
Hetero- and low-dimensional structures
title Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
title_full Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
title_fullStr Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
title_full_unstemmed Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
title_short Impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
title_sort impact of semiconductor quantum dots bandgap on the reabsorption in luminescent concentrator
topic Hetero- and low-dimensional structures
topic_facet Hetero- and low-dimensional structures
url https://nasplib.isofts.kiev.ua/handle/123456789/215144
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AT kostylyovvp impactofsemiconductorquantumdotsbandgaponthereabsorptioninluminescentconcentrator
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