Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals

The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irrad...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2018
Main Author: Gaidar, G.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215146
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Gaidar, G.P.
author_facet Gaidar, G.P.
citation_txt Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence ρₓ /ρ₀ = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out, and the mechanical stress Х was applied.
first_indexed 2026-03-18T12:29:00Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-18T12:29:00Z
publishDate 2018
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Gaidar, G.P.
2026-03-09T09:47:10Z
2018
Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS: 61.80.Ed; 61.82.Fk; 72.20.Fr
https://nasplib.isofts.kiev.ua/handle/123456789/215146
https://doi.org/10.15407/spqeo21.01.048
The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence ρₓ /ρ₀ = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out, and the mechanical stress Х was applied.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Semiconductor Physics
Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
Article
published earlier
spellingShingle Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
Gaidar, G.P.
Semiconductor Physics
title Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
title_full Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
title_fullStr Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
title_full_unstemmed Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
title_short Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
title_sort dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰co) n-si crystals
topic Semiconductor Physics
topic_facet Semiconductor Physics
url https://nasplib.isofts.kiev.ua/handle/123456789/215146
work_keys_str_mv AT gaidargp dosedependenceoftensoresistanceforthesymmetricalorientationofthedeformationaxisrelativelytoallisoenergeticellipsoidsinγirradiated60consicrystals