Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irrad...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2018 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215146 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699951061991424 |
|---|---|
| author | Gaidar, G.P. |
| author_facet | Gaidar, G.P. |
| citation_txt | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence ρₓ /ρ₀ = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out, and the mechanical stress Х was applied.
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| first_indexed | 2026-03-18T12:29:00Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-215146 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-18T12:29:00Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gaidar, G.P. 2026-03-09T09:47:10Z 2018 Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 61.80.Ed; 61.82.Fk; 72.20.Fr https://nasplib.isofts.kiev.ua/handle/123456789/215146 https://doi.org/10.15407/spqeo21.01.048 The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence ρₓ /ρ₀ = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out, and the mechanical stress Х was applied. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor Physics Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals Article published earlier |
| spellingShingle | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals Gaidar, G.P. Semiconductor Physics |
| title | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals |
| title_full | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals |
| title_fullStr | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals |
| title_full_unstemmed | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals |
| title_short | Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals |
| title_sort | dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰co) n-si crystals |
| topic | Semiconductor Physics |
| topic_facet | Semiconductor Physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215146 |
| work_keys_str_mv | AT gaidargp dosedependenceoftensoresistanceforthesymmetricalorientationofthedeformationaxisrelativelytoallisoenergeticellipsoidsinγirradiated60consicrystals |