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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals

The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irrad...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
ISSN:	1560-8034
1. Verfasser:	Gaidar, G.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor Physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215146
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ.

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