Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2018
• 1. Verfasser: Gaidar, G.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215146
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 48-53. — Бібліогр.: 18 назв. — англ.

The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irrad...