Bacherikov, Y., Dmitruk, N., Konakova, R., Kolomys, O., Okhrimenko, O., Strelchuk, V., . . . Svetlichnyi, A. (2018). Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Bacherikov, Yu.Yu, N.L Dmitruk, R.V Konakova, O.F Kolomys, O.B Okhrimenko, V.V Strelchuk, O.S Lytvyn, L.M Kapitanchuk, та A.M Svetlichnyi. "Comparison of Properties Inherent to Thin Titanium Oxide Films Formed by Rapid Thermal Annealing on SiC and Porous SiC Substrates." Semiconductor Physics Quantum Electronics & Optoelectronics 2018.
Стиль цитування MLA (8-ме видання)Bacherikov, Yu.Yu, et al. "Comparison of Properties Inherent to Thin Titanium Oxide Films Formed by Rapid Thermal Annealing on SiC and Porous SiC Substrates." Semiconductor Physics Quantum Electronics & Optoelectronics, 2018.