Bacherikov, Y., Dmitruk, N., Konakova, R., Kolomys, O., Okhrimenko, O., Strelchuk, V., . . . Svetlichnyi, A. (2018). Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Bacherikov, Yu.Yu, N.L Dmitruk, R.V Konakova, O.F Kolomys, O.B Okhrimenko, V.V Strelchuk, O.S Lytvyn, L.M Kapitanchuk, und A.M Svetlichnyi. "Comparison of Properties Inherent to Thin Titanium Oxide Films Formed by Rapid Thermal Annealing on SiC and Porous SiC Substrates." Semiconductor Physics Quantum Electronics & Optoelectronics 2018.
MLA-Zitierstil (8. Ausg.)Bacherikov, Yu.Yu, et al. "Comparison of Properties Inherent to Thin Titanium Oxide Films Formed by Rapid Thermal Annealing on SiC and Porous SiC Substrates." Semiconductor Physics Quantum Electronics & Optoelectronics, 2018.