Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2018
• Автори: Bacherikov, Yu.Yu., Dmitruk, N.L., Konakova, R.V., Kolomys, O.F., Okhrimenko, O.B., Strelchuk, V.V., Lytvyn, O.S., Kapitanchuk, L.M., Svetlichnyi, A.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Теми: Sensors
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215195
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates / Yu.Yu. Bacherikov, N.L. Dmitruk, R.V. Konakova, O.F. Kolomys, O.B. Okhrimenko, V.V. Strelchuk, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 200-205. — Бібліогр.: 24 назв. — англ.

The comparative analysis of optical characteristics inherent to TiO₂/SiC and TiO₂/por-SiC/SiC structures has been performed. It has been shown that, in these structures, regardless of the substrate structure, formation of TiO₂ layers with approximately the same width, 60 nm, takes place. In this case, the TiO₂ film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO₂/por-SiC/SiC structure leads to blurring the oxide film – substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film.