Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
The comparative analysis of optical characteristics inherent to TiO₂/SiC and TiO₂/por-SiC/SiC structures has been performed. It has been shown that, in these structures, regardless of the substrate structure, formation of TiO₂ layers with approximately the same width, 60 nm, takes place. In this cas...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215195 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates / Yu.Yu. Bacherikov, N.L. Dmitruk, R.V. Konakova, O.F. Kolomys, O.B. Okhrimenko, V.V. Strelchuk, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 200-205. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862717480146829312 |
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| author | Bacherikov, Yu.Yu. Dmitruk, N.L. Konakova, R.V. Kolomys, O.F. Okhrimenko, O.B. Strelchuk, V.V. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. |
| author_facet | Bacherikov, Yu.Yu. Dmitruk, N.L. Konakova, R.V. Kolomys, O.F. Okhrimenko, O.B. Strelchuk, V.V. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. |
| citation_txt | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates / Yu.Yu. Bacherikov, N.L. Dmitruk, R.V. Konakova, O.F. Kolomys, O.B. Okhrimenko, V.V. Strelchuk, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 200-205. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The comparative analysis of optical characteristics inherent to TiO₂/SiC and TiO₂/por-SiC/SiC structures has been performed. It has been shown that, in these structures, regardless of the substrate structure, formation of TiO₂ layers with approximately the same width, 60 nm, takes place. In this case, the TiO₂ film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO₂/por-SiC/SiC structure leads to blurring the oxide film – substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film.
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| first_indexed | 2026-03-20T17:14:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215195 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-20T17:14:52Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bacherikov, Yu.Yu. Dmitruk, N.L. Konakova, R.V. Kolomys, O.F. Okhrimenko, O.B. Strelchuk, V.V. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. 2026-03-10T12:38:18Z 2018 Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates / Yu.Yu. Bacherikov, N.L. Dmitruk, R.V. Konakova, O.F. Kolomys, O.B. Okhrimenko, V.V. Strelchuk, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 200-205. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS: 77.55.-g, 78.55.Qr, 81.15.-z https://nasplib.isofts.kiev.ua/handle/123456789/215195 https://doi.org/10.15407/spqeo21.02.200 The comparative analysis of optical characteristics inherent to TiO₂/SiC and TiO₂/por-SiC/SiC structures has been performed. It has been shown that, in these structures, regardless of the substrate structure, formation of TiO₂ layers with approximately the same width, 60 nm, takes place. In this case, the TiO₂ film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO₂/por-SiC/SiC structure leads to blurring the oxide film – substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Sensors Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates Article published earlier |
| spellingShingle | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates Bacherikov, Yu.Yu. Dmitruk, N.L. Konakova, R.V. Kolomys, O.F. Okhrimenko, O.B. Strelchuk, V.V. Lytvyn, O.S. Kapitanchuk, L.M. Svetlichnyi, A.M. Sensors |
| title | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates |
| title_full | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates |
| title_fullStr | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates |
| title_full_unstemmed | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates |
| title_short | Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates |
| title_sort | comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on sic and porous sic substrates |
| topic | Sensors |
| topic_facet | Sensors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215195 |
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