Deposition and optical absorption studies of Cu–As–S thin films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2018
• Hauptverfasser: Studenyak, I.P., Molnar, Z.R., Makauz, I.I., Pop, M.M., Daroci, L., Kokenyesi, S., Szabo, I., Csik, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Schlagworte: Optics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215200
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Deposition and optical absorption studies of Cu–As–S thin films / I.P. Studenyak, Z.R. Molnar, I.I. Makauz, M.M. Pop, L. Daroci, S. Kokenyesi, I. Szabo, A. Csik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 167-172. — Бібліогр.: 24 назв. — англ.

Cu–As–S thin films were deposited using the thermal evaporation technique. Optical transmission spectra of Cu₀.₁As₂.₁S₃.₁ thin films were measured within the temperature range 77...300 K. Temperature behaviour of the absorption edge inherent to Cu₀.₁As₂.₁S₃.₁ thin films was studied. Temperature and compositional dependences of optical parameters in Cu–As–S thin films have been analyzed. It has been revealed that the energy pseudogap decreases and the Urbach energy increase with the copper content increase take place in Cu–As–S thin films. The influence of order-disorder processes on optical properties of Cu–As–S thin films has been discussed.