Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist

Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical m...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2018
Автори: Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/215202
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / P.M. Lytvyn, S.V. Malyuta, I.Z. Indutnyi, A.A. Efremov, O.V. Slobodyan, V.I. Min’ko, A.N. Nazarov, O.V. Borysov, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 152-159. — Бібліогр.: 38 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical modification of chalcogenide films and multilayer GO flakes deposited from an aqueous suspension were compared. The double-layer As₄₀Se₆₀/As₄Ge₃₀S₆₆ chalcogenide resist developed for mechanical SPL and pattern formation processes has been optimized. The resist with the thickness close to 100 nm provides formation of minimal pattern elements with a size of several tens of nanometers. The SPL approach was realized on the basis of a serial NanoScope IIIa Dimension 3000ᵀᴹ scanning probe microscope, and original software utilities were developed. These mechanical SPL could be intended for the verification of innovative ideas in academic research, laboratory-level device prototyping, and developing the functional prototypes of new devices in bio/nanosensorics, plasmonics, 2D electronics, and other modern technology branches.
ISSN:1560-8034