Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist
Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical m...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2018 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215202 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / P.M. Lytvyn, S.V. Malyuta, I.Z. Indutnyi, A.A. Efremov, O.V. Slobodyan, V.I. Min’ko, A.N. Nazarov, O.V. Borysov, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 152-159. — Бібліогр.: 38 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862611807515967488 |
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| author | Lytvyn, P.M. Malyuta, S.V. Indutnyi, I.Z. Efremov, A.A. Slobodyan, O.V. Min’ko, V.I. Nazarov, A.N. Borysov, O.V. Prokopenko, I.V. |
| author_facet | Lytvyn, P.M. Malyuta, S.V. Indutnyi, I.Z. Efremov, A.A. Slobodyan, O.V. Min’ko, V.I. Nazarov, A.N. Borysov, O.V. Prokopenko, I.V. |
| citation_txt | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / P.M. Lytvyn, S.V. Malyuta, I.Z. Indutnyi, A.A. Efremov, O.V. Slobodyan, V.I. Min’ko, A.N. Nazarov, O.V. Borysov, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 152-159. — Бібліогр.: 38 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical modification of chalcogenide films and multilayer GO flakes deposited from an aqueous suspension were compared. The double-layer As₄₀Se₆₀/As₄Ge₃₀S₆₆ chalcogenide resist developed for mechanical SPL and pattern formation processes has been optimized. The resist with the thickness close to 100 nm provides formation of minimal pattern elements with a size of several tens of nanometers. The SPL approach was realized on the basis of a serial NanoScope IIIa Dimension 3000ᵀᴹ scanning probe microscope, and original software utilities were developed. These mechanical SPL could be intended for the verification of innovative ideas in academic research, laboratory-level device prototyping, and developing the functional prototypes of new devices in bio/nanosensorics, plasmonics, 2D electronics, and other modern technology branches.
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| first_indexed | 2026-03-21T12:44:39Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215202 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:44:39Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lytvyn, P.M. Malyuta, S.V. Indutnyi, I.Z. Efremov, A.A. Slobodyan, O.V. Min’ko, V.I. Nazarov, A.N. Borysov, O.V. Prokopenko, I.V. 2026-03-10T12:40:07Z 2018 Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / P.M. Lytvyn, S.V. Malyuta, I.Z. Indutnyi, A.A. Efremov, O.V. Slobodyan, V.I. Min’ko, A.N. Nazarov, O.V. Borysov, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 152-159. — Бібліогр.: 38 назв. — англ. 1560-8034 PACS: 81.16.Nd https://nasplib.isofts.kiev.ua/handle/123456789/215202 https://doi.org/10.15407/spqeo21.02.152 Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical modification of chalcogenide films and multilayer GO flakes deposited from an aqueous suspension were compared. The double-layer As₄₀Se₆₀/As₄Ge₃₀S₆₆ chalcogenide resist developed for mechanical SPL and pattern formation processes has been optimized. The resist with the thickness close to 100 nm provides formation of minimal pattern elements with a size of several tens of nanometers. The SPL approach was realized on the basis of a serial NanoScope IIIa Dimension 3000ᵀᴹ scanning probe microscope, and original software utilities were developed. These mechanical SPL could be intended for the verification of innovative ideas in academic research, laboratory-level device prototyping, and developing the functional prototypes of new devices in bio/nanosensorics, plasmonics, 2D electronics, and other modern technology branches. This work was partially supported by the National Academy of Sciences of Ukraine with the projects 27/18H and DP 3.5.4.8. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimentional structures Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist Article published earlier |
| spellingShingle | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist Lytvyn, P.M. Malyuta, S.V. Indutnyi, I.Z. Efremov, A.A. Slobodyan, O.V. Min’ko, V.I. Nazarov, A.N. Borysov, O.V. Prokopenko, I.V. Hetero- and low-dimentional structures |
| title | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist |
| title_full | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist |
| title_fullStr | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist |
| title_full_unstemmed | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist |
| title_short | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist |
| title_sort | features of mechanical scanning probe lithography on graphene oxide and as(ge)se chalcogenide resist |
| topic | Hetero- and low-dimentional structures |
| topic_facet | Hetero- and low-dimentional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215202 |
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