Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist
Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical m...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2018 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215202 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / P.M. Lytvyn, S.V. Malyuta, I.Z. Indutnyi, A.A. Efremov, O.V. Slobodyan, V.I. Min’ko, A.N. Nazarov, O.V. Borysov, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 152-159. — Бібліогр.: 38 назв. — англ. |