Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2018
• Hauptverfasser: Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Schlagworte: Hetero- and low-dimentional structures
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215202
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / P.M. Lytvyn, S.V. Malyuta, I.Z. Indutnyi, A.A. Efremov, O.V. Slobodyan, V.I. Min’ko, A.N. Nazarov, O.V. Borysov, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 152-159. — Бібліогр.: 38 назв. — англ.

Combined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer scale resolution has been implemented in this work. The dynamics of mechanical m...