Nanoferroics: State-of-the-art, gradient-driven couplings and advanced applications. (Author's review - invited article)

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2018
• Hauptverfasser: Morozovska, A.N., Vorotiahin, I.S., Fomichov, Ye.M., Scherbakov, C.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Schlagworte: Hetero- and low-dimensional structures
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215203
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Nanoferroics: State-of-the-art, gradient-driven couplings and advanced applications. (Author's review - invited article) / A.N. Morozovska, I.S. Vorotiahin, Ye.M. Fomichov, C.M. Scherbakov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 139-151. — Бібліогр.: 35 назв. — англ.

Ferroics and multiferroics are unique objects for fundamental physical research of complex nonlinear processes and phenomena, which occur in them in micro and nanoscale. Due to the possibility of their physical properties being controlled by size effects, nanostructured and nanosized ferroics are among the most promising for advanced applications in nanoelectronics, nanoelectromechanics, optoelectronics, nonlinear optics, and information technologies. The review discusses and analyzes that the thickness of the strained films, the size and shape of the ferroic and multiferroic nanoparticles are unique tools for controlling their phase diagrams, long-range order parameters, magnitude of susceptibility, magnetoelectric coupling, and domain structure characteristics at fixed temperature. Significant influence of the flexochemical effect on the phase transition temperature, polar, and dielectric properties is revealed for thin films and nanoparticles. The obtained results are important for understanding the nonlinear physical processes in nanoferroics as well as for the advanced applications in nanoelectronics.