Self-organization in irradiated semiconductor crystals caused by thermal annealing
Annealing of complex semiconductors GaP and CdP₂, irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α-particles, was carried out, and main electrical parameters (conductivity σ, carrier concentration n, and mobility µ) as well as the positron lif...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2018 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215205 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Self-organization in irradiated semiconductor crystals caused by thermal annealing / M. Zavada, O. Konoreva, P. Lytovchenko, V. Opilat, M. Pinkovska, O. Radkevych, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862701167163736064 |
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| author | Zavada, M. Konoreva, O. Lytovchenko, P. Opilat, V. Pinkovska, M. Radkevych, O. Tartachnyk, V. |
| author_facet | Zavada, M. Konoreva, O. Lytovchenko, P. Opilat, V. Pinkovska, M. Radkevych, O. Tartachnyk, V. |
| citation_txt | Self-organization in irradiated semiconductor crystals caused by thermal annealing / M. Zavada, O. Konoreva, P. Lytovchenko, V. Opilat, M. Pinkovska, O. Radkevych, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Annealing of complex semiconductors GaP and CdP₂, irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α-particles, was carried out, and main electrical parameters (conductivity σ, carrier concentration n, and mobility µ) as well as the positron lifetime τ were studied and analyzed. When the point defect concentration exceeds some critical value, defects of a new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High-temperature annealing of the irradiated sample with increased vacancy concentration causes the appearance of vacancy voids with a lower electron density.
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| first_indexed | 2026-03-18T14:03:27Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215205 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-18T14:03:27Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Zavada, M. Konoreva, O. Lytovchenko, P. Opilat, V. Pinkovska, M. Radkevych, O. Tartachnyk, V. 2026-03-10T12:40:39Z 2018 Self-organization in irradiated semiconductor crystals caused by thermal annealing / M. Zavada, O. Konoreva, P. Lytovchenko, V. Opilat, M. Pinkovska, O. Radkevych, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/215205 https://doi.org/10.15407/spqeo21.02.130 Annealing of complex semiconductors GaP and CdP₂, irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α-particles, was carried out, and main electrical parameters (conductivity σ, carrier concentration n, and mobility µ) as well as the positron lifetime τ were studied and analyzed. When the point defect concentration exceeds some critical value, defects of a new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High-temperature annealing of the irradiated sample with increased vacancy concentration causes the appearance of vacancy voids with a lower electron density. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Self-organization in irradiated semiconductor crystals caused by thermal annealing Article published earlier |
| spellingShingle | Self-organization in irradiated semiconductor crystals caused by thermal annealing Zavada, M. Konoreva, O. Lytovchenko, P. Opilat, V. Pinkovska, M. Radkevych, O. Tartachnyk, V. Semiconductor physics |
| title | Self-organization in irradiated semiconductor crystals caused by thermal annealing |
| title_full | Self-organization in irradiated semiconductor crystals caused by thermal annealing |
| title_fullStr | Self-organization in irradiated semiconductor crystals caused by thermal annealing |
| title_full_unstemmed | Self-organization in irradiated semiconductor crystals caused by thermal annealing |
| title_short | Self-organization in irradiated semiconductor crystals caused by thermal annealing |
| title_sort | self-organization in irradiated semiconductor crystals caused by thermal annealing |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215205 |
| work_keys_str_mv | AT zavadam selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing AT konorevao selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing AT lytovchenkop selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing AT opilatv selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing AT pinkovskam selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing AT radkevycho selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing AT tartachnykv selforganizationinirradiatedsemiconductorcrystalscausedbythermalannealing |