Buchumschlag

Self-organization in irradiated semiconductor crystals caused by thermal annealing

Annealing of complex semiconductors GaP and CdP₂, irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α-particles, was carried out, and main electrical parameters (conductivity σ, carrier concentration n, and mobility µ) as well as the positron lif...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
Hauptverfasser:	Zavada, M., Konoreva, O., Lytovchenko, P., Opilat, V., Pinkovska, M., Radkevych, O., Tartachnyk, V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215205
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Self-organization in irradiated semiconductor crystals caused by thermal annealing / M. Zavada, O. Konoreva, P. Lytovchenko, V. Opilat, M. Pinkovska, O. Radkevych, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 2. — С. 130-133. — Бібліогр.: 7 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Self-organization in irradiated semiconductor crystals caused by thermal annealing
von: M. Zavada, et al.
Veröffentlicht: (2018)

Cyclotron radiation of semiconductor crystals
von: Milenin, G.V., et al.
Veröffentlicht: (2018)

Transformation of structural defects in semiconductors under the action of electromagnetic and magnetic fields, causing resonant phenomena
von: Milenin, G.V., et al.
Veröffentlicht: (2019)

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2018)

Rotation of a thin heated plate caused by its own coherent thermal radiation
von: Pipa, V.I., et al.
Veröffentlicht: (2020)

Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma
von: Belfennache, D., et al.
Veröffentlicht: (2021)

Influence of the near-surface regions of the space charge in semiconductor crystals on defect transformation stimulated by the action of magnetic fields
von: Milenin, G.V., et al.
Veröffentlicht: (2021)

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals
von: Gaidar, G.P.
Veröffentlicht: (2018)

Features of the dielectric properties of medical thermal indicators based on dispersions of cholesteric liquid crystals in the polymer matrix
von: Kovalchuk, O.V., et al.
Veröffentlicht: (2020)

Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures
von: Yurkovych, N.V., et al.
Veröffentlicht: (2018)

Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone
von: Berezhnytska, O.S., et al.
Veröffentlicht: (2019)

Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
von: Sachenko, A.V., et al.
Veröffentlicht: (2018)

Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
von: Konchits, A.A., et al.
Veröffentlicht: (2018)

Crystal structure and electrical properties of Ag₆PS₅I single crystal
von: Studenyak, I.P., et al.
Veröffentlicht: (2021)

Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe
von: Uteniyazov, A.K., et al.
Veröffentlicht: (2019)

Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
von: Milenin, G.V., et al.
Veröffentlicht: (2020)

Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity
von: Leyderman, A.Yu., et al.
Veröffentlicht: (2020)

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface
von: Tatyanenko, N.P., et al.
Veröffentlicht: (2018)

Preparation of quaternary compounds Cu₂ZnSnS₄ by using the self-propagating high-temperature synthesis
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2021)

Mechanical properties of Cu₆PS₅І superionic crystals and thin films
von: Bilanych, V.V., et al.
Veröffentlicht: (2019)

Determination of crystallization conditions of Ge/GaAs heterostructures in the scanning LPE method
von: Tsybulenko, V.V., et al.
Veröffentlicht: (2020)

Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
von: Syngaivska, G.I., et al.
Veröffentlicht: (2018)

Model phonon spectra of Cu₇SiS₅I and Ag₇SiS₅I crystals
von: Nebola, I.I., et al.
Veröffentlicht: (2020)

Electrical properties of cation-substituted Ag₇(Si₁₋ₓGeₓ)S₅I single crystals
von: Studenyak, I.P., et al.
Veröffentlicht: (2021)

Study of structural, electrical, and optical properties of MoRe₀.₀₀₁Se₁.₉₉₉ single crystal
von: Vora, A.M.
Veröffentlicht: (2020)

Empirical prediction of thermal properties, microhardness and sound velocity of cubic zinc-blende AlN
von: Daoud, S.
Veröffentlicht: (2019)

Dielectric properties of nematic liquid crystal with impurities of supramolecular Ni-TMTAA-TCNQ complexes
von: Vovk, V.E., et al.
Veröffentlicht: (2020)

Growth-sector dependence of morphological, structural, and optical features in boron-doped HPHT diamond crystals
von: Strelchuk, V.V., et al.
Veröffentlicht: (2021)

Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon
von: Ismailov, K.А., et al.
Veröffentlicht: (2021)

Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method
von: Bilanych, V.V., et al.
Veröffentlicht: (2018)

Temperature dependence of dielectric properties of the liquid crystal 6CB with the embedded Ag₇GeS₅I nanoparticles
von: Poberezhets, S.I., et al.
Veröffentlicht: (2020)

Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base
von: Bendak, A.V., et al.
Veröffentlicht: (2020)

Preparation and electrical properties of composites based on (Cu₆PS₅I)₁₋ₓ(Cu₇PS₆)ₓ mixed crystals
von: Izai, V.Yu., et al.
Veröffentlicht: (2019)

Influence of anion substitution on electrical conductivity of composites based on liquid crystal with Cu₆PS₅X (X = I, Br) nanoparticles
von: Studenyak, I.P., et al.
Veröffentlicht: (2019)

Account of surface contribution to the thermodynamic properties of lead selenide films
von: Nykyruy, L.I., et al.
Veröffentlicht: (2019)

Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
von: Latreche, A.
Veröffentlicht: (2021)

Comparative characteristics of TiO₂(Er₂O₃, Dy₂O₃)/por-SiC/SiC heterostructures (Review)
von: Bacherikov, Yu.Yu., et al.
Veröffentlicht: (2020)

Inversion of spin levels in exchange-coupled pairs under combined time reversal
von: Geru, I.I.
Veröffentlicht: (2018)

Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes
von: Shashikala, B.N., et al.
Veröffentlicht: (2021)

Key parameters of commercial silicon solar cells with rear metallization
von: Sachenko, A.V., et al.
Veröffentlicht: (2019)