Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2018
• Hauptverfasser: Bilanych, V.V., Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Studenyak, I.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215288
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method / V.V. Bilanych, A.V. Bendak, K.V. Skubenych, A.I. Pogodin, V.S. Bilanych, I.P. Studenyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 273-276. — Бібліогр.: 12 назв. — англ.

(Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals were grown using the Bridgman–Stockbarger method. The hardness dependence on the indentation depth profiles in (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals was investigated. The measurements of mechanical parameters were performed at room temperature by using the micro-indentation...