Savchenko, D., Kalabukhova, E., Shanina, B., Bagraev, N., Klyachkin, L., Malyarenko, A., & Khromov, V. (2018). Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Savchenko, D.V, E.N Kalabukhova, B.D Shanina, N.T Bagraev, L.E Klyachkin, A.M Malyarenko, та V.S Khromov. "Electron and Hole Effective Masses in Heavily Boron-doped Silicon Nanostructures Determined Using Cyclotron Resonance Experiments." Semiconductor Physics Quantum Electronics & Optoelectronics 2018.
Стиль цитування MLA (8-ме видання)Savchenko, D.V, et al. "Electron and Hole Effective Masses in Heavily Boron-doped Silicon Nanostructures Determined Using Cyclotron Resonance Experiments." Semiconductor Physics Quantum Electronics & Optoelectronics, 2018.