Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments
We present the experimental and theoretical results of analysis of the optically-induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m*el = 0.93m₀ and m*el = 0.214m₀. Th...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2018 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215291 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments / D.V. Savchenko, E.N. Kalabukhova, B.D. Shanina, N.T. Bagraev, L.E. Klyachkin, A.M. Malyarenko, V.S. Khromov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 249-255. — Бібліогр.: 12 назв. — англ. |