Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2018
• Hauptverfasser: Savchenko, D.V., Kalabukhova, E.N., Shanina, B.D., Bagraev, N.T., Klyachkin, L.E., Malyarenko, A.M., Khromov, V.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Schlagworte: Semiconductor Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/215291
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments / D.V. Savchenko, E.N. Kalabukhova, B.D. Shanina, N.T. Bagraev, L.E. Klyachkin, A.M. Malyarenko, V.S. Khromov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 249-255. — Бібліогр.: 12 назв. — англ.

We present the experimental and theoretical results of analysis of the optically-induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m*el = 0.93m₀ and m*el = 0.214m₀. Th...