Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC
This work presents theoretical studies of the neutral divacancy, i.e., the Ky5 center that is one of the dominant defects in 3C-SiC bulk crystals subjected to relatively high doses of neutron irradiation. Being the paramagnetic center, the extended defect Ky5 shows the value of the zero field splitt...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215294 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC / B.D. Shanina, V.Ya. Bratus' // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 225-230. — Бібліогр.: 18 назв. — англ. |