Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2018
• Main Authors: Shanina, B.D., Bratus', V.Ya.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Subjects: Semiconductor Physics
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215294
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC / B.D. Shanina, V.Ya. Bratus' // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 225-230. — Бібліогр.: 18 назв. — англ.

This work presents theoretical studies of the neutral divacancy, i.e., the Ky5 center that is one of the dominant defects in 3C-SiC bulk crystals subjected to relatively high doses of neutron irradiation. Being the paramagnetic center, the extended defect Ky5 shows the value of the zero field splitt...