Clusters of nickel atoms and controlling their state in the silicon lattice

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2018
• Автори: Bakhadyrkhanov, M.K., Ismailov, K.A., Ismaylov, B.K., Saparniyazova, Z.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Теми: Hetero- and low-dimensional structures
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215321
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Clusters of nickel atoms and controlling their state in the silicon lattice / M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 392-396. — Бібліогр.: 8 назв. — англ.

The paper reports that using the IR-spectroscopy technique, it has been revealed that nickel atoms in the silicon lattice are gathered in clusters, i.e., the phenomenon of self-assembly takes place. The concentration and dimension of the clusters are mainly defined by the temperature of diffusion and the cooling rate. The composition of clusters of nickel impurity atoms was determined. It was shown that in the process of thermal annealing within the temperature range 650…900 °С there is a significant change in the state, concentration, and size of clusters. Thermal annealing at the above temperatures, 650…900 °С leads to ordering the clusters, that is, self-assembly of cluster blocks, as well as clusters of a loop shape that includes several dozens of clusters. A diffusion technique to form and order clusters of nickel atoms in silicon has been suggested.