Clusters of nickel atoms and controlling their state in the silicon lattice
The paper reports that using the IR-spectroscopy technique, it has been revealed that nickel atoms in the silicon lattice are gathered in clusters, i.e., the phenomenon of self-assembly takes place. The concentration and dimension of the clusters are mainly defined by the temperature of diffusion an...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215321 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Clusters of nickel atoms and controlling their state in the silicon lattice / M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 392-396. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862611264082018304 |
|---|---|
| author | Bakhadyrkhanov, M.K. Ismailov, K.A. Ismaylov, B.K. Saparniyazova, Z.M. |
| author_facet | Bakhadyrkhanov, M.K. Ismailov, K.A. Ismaylov, B.K. Saparniyazova, Z.M. |
| citation_txt | Clusters of nickel atoms and controlling their state in the silicon lattice / M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 392-396. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The paper reports that using the IR-spectroscopy technique, it has been revealed that nickel atoms in the silicon lattice are gathered in clusters, i.e., the phenomenon of self-assembly takes place. The concentration and dimension of the clusters are mainly defined by the temperature of diffusion and the cooling rate. The composition of clusters of nickel impurity atoms was determined. It was shown that in the process of thermal annealing within the temperature range 650…900 °С there is a significant change in the state, concentration, and size of clusters. Thermal annealing at the above temperatures, 650…900 °С leads to ordering the clusters, that is, self-assembly of cluster blocks, as well as clusters of a loop shape that includes several dozens of clusters. A diffusion technique to form and order clusters of nickel atoms in silicon has been suggested.
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| first_indexed | 2026-03-23T18:47:41Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215321 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:41Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bakhadyrkhanov, M.K. Ismailov, K.A. Ismaylov, B.K. Saparniyazova, Z.M. 2026-03-12T08:53:42Z 2018 Clusters of nickel atoms and controlling their state in the silicon lattice / M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 392-396. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 64.75.Qr, 71.62.uf https://nasplib.isofts.kiev.ua/handle/123456789/215321 https://doi.org/10.15407/spqeo21.04.392 The paper reports that using the IR-spectroscopy technique, it has been revealed that nickel atoms in the silicon lattice are gathered in clusters, i.e., the phenomenon of self-assembly takes place. The concentration and dimension of the clusters are mainly defined by the temperature of diffusion and the cooling rate. The composition of clusters of nickel impurity atoms was determined. It was shown that in the process of thermal annealing within the temperature range 650…900 °С there is a significant change in the state, concentration, and size of clusters. Thermal annealing at the above temperatures, 650…900 °С leads to ordering the clusters, that is, self-assembly of cluster blocks, as well as clusters of a loop shape that includes several dozens of clusters. A diffusion technique to form and order clusters of nickel atoms in silicon has been suggested. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hetero- and low-dimensional structures Clusters of nickel atoms and controlling their state in the silicon lattice Article published earlier |
| spellingShingle | Clusters of nickel atoms and controlling their state in the silicon lattice Bakhadyrkhanov, M.K. Ismailov, K.A. Ismaylov, B.K. Saparniyazova, Z.M. Hetero- and low-dimensional structures |
| title | Clusters of nickel atoms and controlling their state in the silicon lattice |
| title_full | Clusters of nickel atoms and controlling their state in the silicon lattice |
| title_fullStr | Clusters of nickel atoms and controlling their state in the silicon lattice |
| title_full_unstemmed | Clusters of nickel atoms and controlling their state in the silicon lattice |
| title_short | Clusters of nickel atoms and controlling their state in the silicon lattice |
| title_sort | clusters of nickel atoms and controlling their state in the silicon lattice |
| topic | Hetero- and low-dimensional structures |
| topic_facet | Hetero- and low-dimensional structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215321 |
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