Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2018
• Автори: Yurkovych, N.V., Mar'yan, M.I., Seben, V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
• Теми: Semiconductor physics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215325
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures / N.V. Yurkovych, M.I. Mar'yan, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 365-373. — Бібліогр.: 24 назв. — англ.

The criteria for formation of an inhomogeneous structure based on vitreous Ge₂S₃ with modifiers Al, Bi, Pb, and Te that are identified due to changes in the condensed medium (evaporation temperature, condensation velocity, increasing or decreasing the intensity of the fluctuations of the active field) have been determined. The article analyzes the obtained equations describing the formation of inhomogeneous amorphous structures and taking into account the dynamics of the concentration of the modifier owing to the source of the atomic flow of a chemical element, structural heterogeneity (availability of vacancies, micropores), and particle diffusion. Computer simulation of the source of the atomic flow of the modifier has been carried out, which makes it possible to form gradient structures with the predicted distribution of the chemical element according to the film thickness. Morphology of gradient structure surfaces and the mechanism of condensation of modifiers Al, Bi, Pb, Te with the amorphous matrix of Ge₂S₃ have been ascertained.