Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures
The criteria for formation of an inhomogeneous structure based on vitreous Ge₂S₃ with modifiers Al, Bi, Pb, and Te that are identified due to changes in the condensed medium (evaporation temperature, condensation velocity, increasing or decreasing the intensity of the fluctuations of the active fiel...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2018 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215325 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures / N.V. Yurkovych, M.I. Mar'yan, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 365-373. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862624912935485440 |
|---|---|
| author | Yurkovych, N.V. Mar'yan, M.I. Seben, V. |
| author_facet | Yurkovych, N.V. Mar'yan, M.I. Seben, V. |
| citation_txt | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures / N.V. Yurkovych, M.I. Mar'yan, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 365-373. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The criteria for formation of an inhomogeneous structure based on vitreous Ge₂S₃ with modifiers Al, Bi, Pb, and Te that are identified due to changes in the condensed medium (evaporation temperature, condensation velocity, increasing or decreasing the intensity of the fluctuations of the active field) have been determined. The article analyzes the obtained equations describing the formation of inhomogeneous amorphous structures and taking into account the dynamics of the concentration of the modifier owing to the source of the atomic flow of a chemical element, structural heterogeneity (availability of vacancies, micropores), and particle diffusion. Computer simulation of the source of the atomic flow of the modifier has been carried out, which makes it possible to form gradient structures with the predicted distribution of the chemical element according to the film thickness. Morphology of gradient structure surfaces and the mechanism of condensation of modifiers Al, Bi, Pb, Te with the amorphous matrix of Ge₂S₃ have been ascertained.
|
| first_indexed | 2026-03-23T18:47:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215325 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:47:45Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Yurkovych, N.V. Mar'yan, M.I. Seben, V. 2026-03-12T08:55:13Z 2018 Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures / N.V. Yurkovych, M.I. Mar'yan, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 365-373. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS: 78.66.Jg, 68.35.bj, 89.75.Fb https://nasplib.isofts.kiev.ua/handle/123456789/215325 https://doi.org/10.15407/spqeo21.04.365 The criteria for formation of an inhomogeneous structure based on vitreous Ge₂S₃ with modifiers Al, Bi, Pb, and Te that are identified due to changes in the condensed medium (evaporation temperature, condensation velocity, increasing or decreasing the intensity of the fluctuations of the active field) have been determined. The article analyzes the obtained equations describing the formation of inhomogeneous amorphous structures and taking into account the dynamics of the concentration of the modifier owing to the source of the atomic flow of a chemical element, structural heterogeneity (availability of vacancies, micropores), and particle diffusion. Computer simulation of the source of the atomic flow of the modifier has been carried out, which makes it possible to form gradient structures with the predicted distribution of the chemical element according to the film thickness. Morphology of gradient structure surfaces and the mechanism of condensation of modifiers Al, Bi, Pb, Te with the amorphous matrix of Ge₂S₃ have been ascertained. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor physics Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures Article published earlier |
| spellingShingle | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures Yurkovych, N.V. Mar'yan, M.I. Seben, V. Semiconductor physics |
| title | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures |
| title_full | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures |
| title_fullStr | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures |
| title_full_unstemmed | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures |
| title_short | Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures |
| title_sort | synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures |
| topic | Semiconductor physics |
| topic_facet | Semiconductor physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215325 |
| work_keys_str_mv | AT yurkovychnv synergeticsoftheinstabilityandrandomnessintheformationofgradientmodifiedsemiconductorstructures AT maryanmi synergeticsoftheinstabilityandrandomnessintheformationofgradientmodifiedsemiconductorstructures AT sebenv synergeticsoftheinstabilityandrandomnessintheformationofgradientmodifiedsemiconductorstructures |