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Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures

The criteria for formation of an inhomogeneous structure based on vitreous Ge₂S₃ with modifiers Al, Bi, Pb, and Te that are identified due to changes in the condensed medium (evaporation temperature, condensation velocity, increasing or decreasing the intensity of the fluctuations of the active fiel...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
Hauptverfasser:	Yurkovych, N.V., Mar'yan, M.I., Seben, V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215325
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Synergetics of the instability and randomness in the formation of gradient-modified semiconductor structures / N.V. Yurkovych, M.I. Mar'yan, V. Seben // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 365-373. — Бібліогр.: 24 назв. — англ.

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