Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan

A set of chitosan samples irradiated by electrons with various doses was studied using the EPR method. Two kinds of paramagnetic defects, PC1 and PC2, initiated by this irradiation due to the breakage of bonds in positions C5 and C1 of the chitosan structure, are revealed in the “amorphous” and “cry...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2018
Main Authors: Konchits, A.A., Shanina, B.D., Yanchuk, I.B., Krasnovyd, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/215328
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan / A.A. Konchits, B.D. Shanina, I.B. Yanchuk, S.V. Krasnovyd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 336-344. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862698703663398912
author Konchits, A.A.
Shanina, B.D.
Yanchuk, I.B.
Krasnovyd, S.V.
author_facet Konchits, A.A.
Shanina, B.D.
Yanchuk, I.B.
Krasnovyd, S.V.
citation_txt Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan / A.A. Konchits, B.D. Shanina, I.B. Yanchuk, S.V. Krasnovyd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 336-344. — Бібліогр.: 25 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description A set of chitosan samples irradiated by electrons with various doses was studied using the EPR method. Two kinds of paramagnetic defects, PC1 and PC2, initiated by this irradiation due to the breakage of bonds in positions C5 and C1 of the chitosan structure, are revealed in the “amorphous” and “crystalline” samples of chitosan. The structure of defects, their spectroscopic parameters, and the kinetics of accumulation/decay have been established for the first time. It is found that the EPR spectrum of the “crystalline” samples consists of 10 almost equidistant lines of the super-hyperfine (SHF) structure with the splitting between them A = 7.4 G for the PC1 center, and a single wide line with a markedly different g-value, attributed to the PC2 one. Both these lines are also present in powder “amorphous” samples, but the SHF structure of the PC1 centers in them is not registered because of the broadening of the individual SHF components. Kinetics of defect accumulation with increasing dose D of the irradiation, and their gradual disappearance during prolonged storage of samples in air, were discovered and studied. Kinetic equations were solved, and the D-dependence and decay times were found from the comparison of theoretical results with the experimental ones. It has been shown that the concentration of shallow and deep traps for electrons affects the rate of the decay process. The recovery process is much slower in the samples having a more perfect crystalline structure.
first_indexed 2026-03-23T18:47:47Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-215328
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-23T18:47:47Z
publishDate 2018
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Konchits, A.A.
Shanina, B.D.
Yanchuk, I.B.
Krasnovyd, S.V.
2026-03-12T08:56:03Z
2018
Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan / A.A. Konchits, B.D. Shanina, I.B. Yanchuk, S.V. Krasnovyd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 4. — С. 336-344. — Бібліогр.: 25 назв. — англ.
1560-8034
PACS: 61.82.Pv, 76.30.Rn, 82.35.Pq, 87.53.Ay, 87.80.Lq
https://nasplib.isofts.kiev.ua/handle/123456789/215328
https://doi.org/10.15407/spqeo21.04.336
A set of chitosan samples irradiated by electrons with various doses was studied using the EPR method. Two kinds of paramagnetic defects, PC1 and PC2, initiated by this irradiation due to the breakage of bonds in positions C5 and C1 of the chitosan structure, are revealed in the “amorphous” and “crystalline” samples of chitosan. The structure of defects, their spectroscopic parameters, and the kinetics of accumulation/decay have been established for the first time. It is found that the EPR spectrum of the “crystalline” samples consists of 10 almost equidistant lines of the super-hyperfine (SHF) structure with the splitting between them A = 7.4 G for the PC1 center, and a single wide line with a markedly different g-value, attributed to the PC2 one. Both these lines are also present in powder “amorphous” samples, but the SHF structure of the PC1 centers in them is not registered because of the broadening of the individual SHF components. Kinetics of defect accumulation with increasing dose D of the irradiation, and their gradual disappearance during prolonged storage of samples in air, were discovered and studied. Kinetic equations were solved, and the D-dependence and decay times were found from the comparison of theoretical results with the experimental ones. It has been shown that the concentration of shallow and deep traps for electrons affects the rate of the decay process. The recovery process is much slower in the samples having a more perfect crystalline structure.
The authors of the paper are grateful for the support of the National Academy of Science of Ukraine (Project №26/17-Н).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Semiconductor physics
Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
Article
published earlier
spellingShingle Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
Konchits, A.A.
Shanina, B.D.
Yanchuk, I.B.
Krasnovyd, S.V.
Semiconductor physics
title Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
title_full Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
title_fullStr Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
title_full_unstemmed Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
title_short Nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
title_sort nature and kinetics of paramagnetic defects in chitosan induced by beta-irradiation of chitosan
topic Semiconductor physics
topic_facet Semiconductor physics
url https://nasplib.isofts.kiev.ua/handle/123456789/215328
work_keys_str_mv AT konchitsaa natureandkineticsofparamagneticdefectsinchitosaninducedbybetairradiationofchitosan
AT shaninabd natureandkineticsofparamagneticdefectsinchitosaninducedbybetairradiationofchitosan
AT yanchukib natureandkineticsofparamagneticdefectsinchitosaninducedbybetairradiationofchitosan
AT krasnovydsv natureandkineticsofparamagneticdefectsinchitosaninducedbybetairradiationofchitosan