Influence of boron doping on the photosensitivity of cubic silicon carbide

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2019
• ISSN: 1560-8034
• Main Authors: Rodionov, V.N., Bratus', V.Ya., Voronov, S.O.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Subjects: Optoelectronics and optoelectronic devices
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/215422
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Influence of boron doping on the photosensitivity of cubic silicon carbide / V.N. Rodionov, V.Ya. Bratus', S.O. Voronov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 92-97. — Бібліогр.: 20 назв. — англ.

Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with the addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity within the range 1.3…2.0 eV with the peak near 1.7 eV. Doping of 3С-SiC single crystals with B impurity leads to the appearance of an efficient recombination center with the thermal activation energy 0.27 ± 0.02 eV inside the band gap and to widening the spectral sensitivity of the material over the impurity long-wave range. Availability of boron results in changing the temperature dependence of photoconductivity from the decay characteristic to the activation one. It will allow expanding the operation range of devices based on 3C-SiC〈B〉 up to 500 °С and above it. In addition, the lux-ampere characteristics become linear, i.e., more convenient from the metrological viewpoint. Depending on the type of doping of 3C-SiC〈B〉 samples, pronounced variations of line positions in photoluminescence spectra in the near-infrared range are revealed.