Photodetector device for fiber-optical telecommunication systems
The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with a Schottky barrier, have been analyzed in this work. Considered here are the advantages of the analyzed semiconductor photodetectors as compared with other detectors of the opt...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2019 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2019
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/215423 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photodetector device for fiber-optical telecommunication systems / N.O. Andreyeva, V.O. Zuyev, S.V. Morozova, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 88-91. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860479874252144640 |
|---|---|
| author | Andreyeva, N.O. Zuyev, V.O. Morozova, S.V. Red'ko, R.A. |
| author_facet | Andreyeva, N.O. Zuyev, V.O. Morozova, S.V. Red'ko, R.A. |
| citation_txt | Photodetector device for fiber-optical telecommunication systems / N.O. Andreyeva, V.O. Zuyev, S.V. Morozova, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 88-91. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with a Schottky barrier, have been analyzed in this work. Considered here are the advantages of the analyzed semiconductor photodetectors as compared with other detectors of the optical signal, in particular, their ability to register long-wave radiation, since the formation of mobile carriers in them is not related to overcoming a significant surface potential barrier. To provide a high multiplication factor of an avalanche silicon photodiode with the Schottky barrier, an approach consisted of using the latter together with a receiving optical module for fiber-optic telecommunications systems has been proposed. A spectral characteristic for the Si-Au system has been obtained; it is not inferior to a germanium photodiode, with the possibility of further optimization. The frequency and noise characteristics of the device have been presented. The dynamic range and the threshold of its sensitivity have been determined. The physical equivalent circuit for the photodiode of the specified type has been presented. The frequency characteristics of the output power and the noise characteristics of the receiving optical module have also been presented. It has been determined that the sensitivity threshold is 36 dB for the information transfer rate close to 5 Gbit/s. Reduction of intersymbol interference has been experimentally detected, which will be especially effective in the case of the propagation of a signal with the corresponding shape. The obtained characteristics totally satisfy the requirements imposed on photodetectors of this type.
|
| first_indexed | 2026-03-23T18:51:12Z |
| format | Article |
| fulltext |
ISSN 1560-8034, 1605-6582 (On-line), SPQEO, 2019. V. 22, N 1. P. 88-91.
© 2019, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
88
Optoelectronics and optoelectronic devices
Photodetector device for fiber optical telecommunication systems
N.O. Andreyeva
1
, V.O. Zuyev
1
, S.V. Morozova
1
, R.A. Red’ko
1,2
1
State University of Telecommunications,
7, Solomenska str., 03680 Kyiv, Ukraine
2
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
45, prospect Nauky, 03680 Kyiv, Ukraine
Abstract. The properties of a photodetector device with a balanced photodetector, which
includes an avalanche silicon photodiode with the Schottky barrier, have been analyzed in
this work. Considered here are advantages of the analyzed semiconductor photodetectors as
compared with other detectors of the optical signal, in particular, their ability to register
long-wave radiation, since formation of mobile carriers in them is not related with
overcoming a significant surface potential barrier. To provide a high multiplication factor
of an avalanche silicon photodiode with the Schottky barrier, an approach consisted of
using the latter together with a receiving optical module for fiber-optic telecommunications
systems has been proposed. A spectral characteristic for the Si-Au system has been
obtained, it is not inferior to a germanium photodiode with the possibility of further
optimization. The frequency and noise characteristics of the device have been presented.
The dynamic range and the threshold of its sensitivity have been determined. The physical
equivalent circuit for the photodiode of the specified type has been presented. The
frequency characteristics of the output power and the noise characteristics of the receiving
optical module have been also presented. It has been determined that the sensitivity
threshold is –36 dB for the information transfer rate close to 5 Gbit/s. Reduction of
intersymbol interference has been experimentally detected, which will be especially
effective in the case of propagation of a signal with the corresponding shape. The obtained
characteristics totally satisfy the requirements imposed on photodetectors of this type.
Keywords: avalanche silicon photodiode with Schottky barrier, fiber optic
telecommunication systems, balanced photodetector.
doi: https://doi.org/10.15407/spqeo22.01.88
PACS 73.40.Lq, 73.30.+y
Manuscript received 12.02.19; revised version received 28.02.19; accepted for publication
27.03.19; published online 30.03.19.
1. Introduction
Currently, much attention is paid to the development of
new efficient photodetector devices (PDD) for fiber-optic
telecommunication systems (FOTS) [1-4]. This is due to
the fact that the range and speed of information transfer
essentially depend on the quality of PDD. Currently, bulk
p-n photodiodes (PD) and bulk avalanche PD are serially
used in FOTS systems. The advantage of semiconductor
photodetectors as compared to, for example,
photomultipliers is their ability to detect long-wave (up
to 32 µm) radiation, since formation of mobile carriers in
them is not associated with overcoming a significant
surface potential barrier. In [5], we proposed to use the
planar silicon PDs with the Schottky barrier, which are
more effective in our opinion. A feature of these
photodiodes is that they can be used to shift the spectral
characteristics of silicon photodiodes to the long-wave
region beyond their fundamental absorption edge (low-
energy limit of sensitivity of photodiodes with p-n
junction) [6].
Photons with the energy lower than the band gap of
silicon pass through the plate and are absorbed in metal,
exciting hot electrons in it. The height of the internal
Schottky barrier at the metal–semiconductor interface is
determined by the work function of the metal. Those of
the excited electrons, which have sufficient momentum
in the direction to the barrier, transfer to the space charge
region adjacent to the boundary that is depleted by the
majority carriers (in the case of avalanche photodiodes,
avalanche multiplication can take place here). The short-
wave limit of sensitivity of such a device is defined by
the onset of its fundamental absorption in a
semiconductor (silicon), and the long-wave boundary is
defined by the height of the metal-semiconductor
potential barrier defined by the difference in the work
SPQEO, 2019. V. 22, N 1. P. 88-91.
Andreyeva N.O., Zuyev V.O., Morozova S.V., Red’ko R.A. Photodetector device for fiber optical telecommunication …
89
functions of the contacting semiconductor and metal
(gold, palladium or others). One of the advantages of this
type of PD is their compatibility with the planar
technology of manufacturing the counting device
amplifiers. Analyzed in this work are the properties of
PDD for systems with coherent coupling (SCC), which
includes an avalanche PD with the Schottky barrier.
2. Experimental and results
It is known that avalanche photodiodes with such
advantages as high sensitivity, small dimensions and low
supply voltage also have disadvantages that limit their
widespread use. These include temperature and temporal
instability, the dependence of sensitivity on the level of
background illumination, high requirements to stability
of the supply voltage, as well as technological limitations
that include the presence of local areas in the region of
the p-n junction, in which avalanche multiplication
occurs earlier than in the rest value of p-n junction. It
leads to the fact that the high multiplication factor of the
photodiode is practically not realized. To solve this
problem, one used various technological and structural
methods.
The approach proposed in this paper consists in
using an avalanche photodiode with the Schottky barrier
in conjunction with a receiving optical module for fiber-
optic telecommunication systems. The structure
consisting of p-type silicon with Au was investigated, the
surface barrier was 0.34 V. Fig. 1 shows the spectral
characteristics of PD for the Si-Au system. It can be seen
that the photosensitivity extends down to λ = 2.5 µm,
which makes it possible to use the device in FOTS.
Indeed, at present, the wavelength preferred for
transmitting optical information is λ = 1.55 µm [6, 7]. It
should be noted that the literature data indicate that the
spectral characteristic of the diode under study in this
case is not inferior to that of germanium PD [6], and in
our case it is possible to further optimize PD by
improving the device case.
Fig. 1. Spectral characteristic of the Si–Au system.
2.1. Structure and characteristics of PDD for the
systems with coherent coupling
Fig. 2 shows the physical equivalent circuit of PD of the
specified type. In addition to PD, an optical generator is
included in PDD.
In Fig. 2, there are adopted the following notations:
Cp-n – capacity of p-n transition,
Rl – loss resistance of the photodiode,
L1 – inductance of outputs,
CC – capacity of the package case,
L2 – inductance of external outputs,
Zd – total resistance of the structure,
Yd – conductivity in the terminals of the diode,
ZL – load resistance,
Iph – photocurrent,
IL – current in the load.
For the most current information transfer rates
(above 1 Gbit/s), the use of a laser with distributed
feedback has proved promising.
To determine the requirements for the permissible
level of phase noise of a laser, the relative width of the
measurement line was estimated at the half level:
0
l
B
∆ν
∆ν = , (1)
where
l
∆ν is the absolute width of the measurement line
at the half level, B – information transfer rate.
Fig. 3 shows the obtained dependence
l
∆ν on B for
the average level of coherence used by us and an error
not higher than 10
–9
. It is seen that the absolute width of
the line grows linearly with increasing the information
transfer rate.
2.2. Principal scheme of a receiving optical module with
a balanced photodetector
Fig. 4 shows a principal scheme of a receiving optical
module (ROM) for the case of the used balanced
photodetector.
The differential signal of intermediate frequency
falls on the input of the first stage through the correcting
inductance, which increases the transfer characteristic of
the photodiodes in the high-frequency
Fig. 2. Physical equivalent PD scheme with the Schottky
barrier.
LZ
LI
Rп Lв1 Lв2
CкIф
Z (Y )
Cp-n CC
npC −
lR 1L
2L
)( dd YZ
phI
0.0 0.5 1.0 1.5 2.0
1
10
100
I,
a
rb
.u
n
.
Wavelength, µm
SPQEO, 2019. V. 22, N 1. P. 88-91.
Andreyeva N.O., Zuyev V.O., Morozova S.V., Red’ko R.A. Photodetector device for fiber optical telecommunication …
90
Fig. 3. Dependence of the absolute width of the measurement
line at the half level of the information transfer rate.
С1
С2
С3
С4
С5
VD1
VD2
R1
R2
R3 R4
R5
R7
R6
Fig. 4. Principal scheme of ROM with a balanced
photodetector.
region. In the first amplifier stage, parallel feedback is
applied using a serial RC circuit, and in the second one –
current feedback acting at low and middle frequencies.
In the absence of correlation between the sources of
noise voltage and current, the minimum noise coefficient
of the transistor is described by the following formula
[5]:
min
2 2
1 2 2n n y n n y nK R G R G G R= + + + (2)
where Rn and Gn are the noise resistance and conductivity
of the transistor, respectively, 1
y
G R= – the real part of
the conductivity of the amplifier.
2.3. ROM characteristics at the output
Fig. 5 shows the frequency characteristics at the ROM
output and the noise characteristics. From the figure, it
follows that these characteristics fully meet the
requirements for PDD. In addition, it should be noted an
increase in the dynamic range up to 30 dB and a
satisfactory threshold of sensitivity (–36 dB) at an
information transfer rate of 5 Gbit/s.
Fig. 5. Frequency characteristics of output power (1) and noise
characteristics of balanced ROM (2).
It is known that the causes of noises are random
thermal movement of charge carriers in conductors and
semiconductor structures, their uneven distribution in
bulk, etc. With increasing the temperature, the level of
intrinsic noise increases. The noise intensity is quite
small. However, passing through the receiver with a large
gain, they create unwanted voltage at its output. The
proposed PDD has a small degree of heating, which has a
positive effect on its noise characteristics. Also, another
important advantage of using this PDD is the
experimentally observed reduction of intersymbol
interference, which turns out to be especially effective in
the case of signal propagation, which has a form close to
the shape of the function plot ( )siny x x= .
It should be noted that each type of LED
corresponds to a certain spectral characteristic, which
indicates the relative sensitivity of the device to radiation
of different wavelength within the spectral sensitivity of
the device, and for silicon photodiodes its maximum is at
0.96 µm (the operation spectral range 0.4…1.1 µm),
which imposes certain limitations on the use of the
frequency range of electromagnetic waves.
The spectral characteristic of surface-barrier devices
does not have a clearly pronounced maximum – in the
short-wave and long-wave regions their sensitivity is
correspondingly higher than that of diffusion devices.
Silicon avalanche photodiodes with the Schottky barrier
are sensitive in the near infrared region of the spectrum
(1 to 2 µm), and with an appropriate choice of contacting
metal of silicon conductivity type and operating
temperature, the sensitivity region can be stretched up to
4 µm or more, which makes these device structures even
more promising [6].
3. Conclusions
The photodetector device with a balanced photodetector,
which includes the silicon photodiode with the Schottky
barrier, have been developed and analyzed. The
frequency and noise characteristics of the receiving
optical module have been measured. The dynamic range
of PDD and its sensitivity threshold have been
determined. It has been shown that these characteristics
fully meet the requirements for PDD of this type [7].
ν л
В, Гбит/с0,5
10
20
60
0
40
1,0 1,5
B, Gbit/s
∆
ν l
,
ar
b
.u
n
.
0.5 1.0 1.5
f, МГц100
-20
-10
0
О
тн
о
с
и
те
л
ь
н
ы
й
у
р
о
в
е
н
ь
ш
у
м
а,
д
Б
200 300 400 500 600 700
2
1
f, MHz
R
el
at
iv
e
n
o
is
e
le
v
el
,
d
B
SPQEO, 2019. V. 22, N 1. P. 88-91.
Andreyeva N.O., Zuyev V.O., Morozova S.V., Red’ko R.A. Photodetector device for fiber optical telecommunication …
91
References
1. Freeman R.L. Fiber Optic Systems for
Telecommunications. Wiley-Interscience, 2002.
2. Liu J., Zhang T., Li Y., Ding L., Tao J., Wang Y.,
Wang Q., Fang J. Design and characterization of
free-running InGaAsP single-photon detector with
active-quenching technique. J. Appl. Phys. 2017.
122, No 1. P. 013104.
3. Chatterjee A., Agnihotri V.K., Khamari S.K.,
Porwal S., Bose A., Joshi S.C., Sharma T.K.
Peculiarities of the current-voltage and capacitance-
voltage characteristics of plasma etched GaN and
their relevance to n-GaN Schottky photodetectors.
J. Appl. Phys. 2018. 124, No 10. P. 104504.
4. Vieira M., Fernandes M., Louro P., Schwarz R.,
Schubert M. Optimized laser scanned photodiode
(LSP) imaging transducer. physica status solidi (a).
2001. 185, No 1. P. 129–135.
5. Andreeva N.A., Zingaeva E.I., Zuev V.A., Muravov
V.M. Frequency characteristics of the avalanche
silicon photodiode with Schottky barrier.
Telekomunikaciyni ta informaciyni tehnologii. 2016.
3. P. 61–65 (in Russian).
6. Rosencher E., Vinter B. Optoelectronics.
Cambridge University Press, 2002.
7. Lehkii V.N, Galun B.V., Sankov O.V.
Optoelectronic Elements and Devices for Special-
Purpose Systems. Novosibirsk, NGTU, 2011 (in
Russian).
Authors and CV
Andreeva N.O. PhD “Arms and
military equipment”, Associate
Professor.
State University of Telecommuni-
cations
E-mail: nataliiandreeva55@ukr.net
Zuyev V.O. PhD “Solid-State
Physics”, Dr., Professor.
State University of Telecommu-
nications
E-mail: volodya.zyev2015@yanltx.ru
Morozova S.V.
State University of Telecommuni-
cations
E-mail: svmorozova@ukr.net.
Red’ko R.A. PhD “Solid-State
Physics”, Senior Researcher,
Associate Professor.
V. Lashkaryov Institute of
Semiconductor Physics, National
Academy of Sciences of Ukraine
E-mail: redko.rom@gmail.com
|
| id | nasplib_isofts_kiev_ua-123456789-215423 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-23T18:51:12Z |
| publishDate | 2019 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Andreyeva, N.O. Zuyev, V.O. Morozova, S.V. Red'ko, R.A. 2026-03-16T10:59:07Z 2019 Photodetector device for fiber-optical telecommunication systems / N.O. Andreyeva, V.O. Zuyev, S.V. Morozova, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 88-91. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.40.Lq, 73.30.+y https://nasplib.isofts.kiev.ua/handle/123456789/215423 https://doi.org/10.15407/spqeo22.01.88 The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with a Schottky barrier, have been analyzed in this work. Considered here are the advantages of the analyzed semiconductor photodetectors as compared with other detectors of the optical signal, in particular, their ability to register long-wave radiation, since the formation of mobile carriers in them is not related to overcoming a significant surface potential barrier. To provide a high multiplication factor of an avalanche silicon photodiode with the Schottky barrier, an approach consisted of using the latter together with a receiving optical module for fiber-optic telecommunications systems has been proposed. A spectral characteristic for the Si-Au system has been obtained; it is not inferior to a germanium photodiode, with the possibility of further optimization. The frequency and noise characteristics of the device have been presented. The dynamic range and the threshold of its sensitivity have been determined. The physical equivalent circuit for the photodiode of the specified type has been presented. The frequency characteristics of the output power and the noise characteristics of the receiving optical module have also been presented. It has been determined that the sensitivity threshold is 36 dB for the information transfer rate close to 5 Gbit/s. Reduction of intersymbol interference has been experimentally detected, which will be especially effective in the case of the propagation of a signal with the corresponding shape. The obtained characteristics totally satisfy the requirements imposed on photodetectors of this type. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optoelectronics and optoelectronic devices Photodetector device for fiber-optical telecommunication systems Article published earlier |
| spellingShingle | Photodetector device for fiber-optical telecommunication systems Andreyeva, N.O. Zuyev, V.O. Morozova, S.V. Red'ko, R.A. Optoelectronics and optoelectronic devices |
| title | Photodetector device for fiber-optical telecommunication systems |
| title_full | Photodetector device for fiber-optical telecommunication systems |
| title_fullStr | Photodetector device for fiber-optical telecommunication systems |
| title_full_unstemmed | Photodetector device for fiber-optical telecommunication systems |
| title_short | Photodetector device for fiber-optical telecommunication systems |
| title_sort | photodetector device for fiber-optical telecommunication systems |
| topic | Optoelectronics and optoelectronic devices |
| topic_facet | Optoelectronics and optoelectronic devices |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215423 |
| work_keys_str_mv | AT andreyevano photodetectordeviceforfiberopticaltelecommunicationsystems AT zuyevvo photodetectordeviceforfiberopticaltelecommunicationsystems AT morozovasv photodetectordeviceforfiberopticaltelecommunicationsystems AT redkora photodetectordeviceforfiberopticaltelecommunicationsystems |