Transformation of structural defects in semiconductors under the action of electromagnetic and magnetic fields, causing resonant phenomena

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2019
• Автори: Milenin, G.V., Red'ko, R.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2019
• Теми: Semiconductor physics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/215429
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Transformation of structural defects in semiconductors under the action of electromagnetic and magnetic fields, causing resonant phenomena / G.V. Milenin, R.A. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 1. — С. 39-46. — Бібліогр.: 27 назв. — англ.

Possible mechanisms of transformation of defects in semiconductor structures under the action of electromagnetic radiation in the microwave range and pulsed magnetic field have been analyzed. Electrical-resonance effects under nonthermal action of electromagnetic fields have been considered, namely: resonant detachment of dislocations and destruction of impurity complexes in semiconductor crystals, electrical-resonance transformation of defects in semiconductor crystals under action of weak pulsed magnetic fields; magnetic-resonance effects on defects in semiconductor crystals under action of weak magnetic and electromagnetic fields. It has been shown that alternative interaction mechanisms should be used to explain a large number of reliably established magnetically induced effects and phenomena associated with the nonthermal effects of microwave fields. There are two the most probable mechanisms: (i) spin-dependent reactions of paramagnetic defects in semiconductor crystals, as a result of which detachment and subsequent movement of dislocations in the field of internal stresses and (ii) resonant phenomena of various nature occur, which, generally, do not require high energies, and have been realized when the oscillation frequencies of the system and the external action coincide. A sharp increase in the amplitude of oscillations leads to the detachment of dislocations and destruction of impurity complexes with subsequent movement and diffusion under the action of a mosaic of internal mechanical stresses in the crystal. The principal physical identity of the influence of a weak magnetic field and the nonthermal action of microwave radiation on a semiconductor material has been shown.