Latreche, A. (2019). Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationLatreche, A. "Combination of Thermionic Emission and Tunneling Mechanisms to Analyze the Leakage Current for 4H-SiC Schottky Barrier Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics 2019.
MLA (8th ed.) CitationLatreche, A. "Combination of Thermionic Emission and Tunneling Mechanisms to Analyze the Leakage Current for 4H-SiC Schottky Barrier Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics, 2019.
Warning: These citations may not always be 100% accurate.