Latreche, A. (2019). Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Latreche, A. "Combination of Thermionic Emission and Tunneling Mechanisms to Analyze the Leakage Current for 4H-SiC Schottky Barrier Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics 2019.
MLA-Zitierstil (8. Ausg.)Latreche, A. "Combination of Thermionic Emission and Tunneling Mechanisms to Analyze the Leakage Current for 4H-SiC Schottky Barrier Diodes." Semiconductor Physics Quantum Electronics & Optoelectronics, 2019.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.